Literature DB >> 32462863

Single-Step Formation of a Low Work Function Cathode Interlayer and n-type Bulk Doping from Semiconducting Polymer/Polyethylenimine Blend Solution.

Keli Fabiana Seidel1,2, Dominique Lungwitz2, Andreas Opitz2, Thomas Krüger3, Jan Behrends3, Seth R Marder4, Norbert Koch2,5.   

Abstract

The use of polyethylenimine (PEI) as a thin interlayer between cathodes and organic semiconductors in order to reduce interfacial Ohmic losses has become an important approach in organic electronics. It has also been shown that such interlayers can form spontaneously because of vertical phase separation when spin-coating a blended solution of PEI and the semiconductor. Furthermore, bulk doping of semiconducting polymers by PEI has been claimed. However, to our knowledge, a clear delineation of interfacial from bulk effects has not been published. Here, we report a study on thin films formed by spin-coating blended solutions of PEI and poly{[N,N'-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} [P(NDI2OD-T2)] on indium tin oxide. We observed the vertical phase separation in such films, where PEI accumulates at the bottom and the top, sandwiching the semiconductor layer. The PEI interlayer on ITO reduces the electron injection barrier to the minimum value determined by Fermi level pinning, which, in turn, reduces the contact resistance by 5 orders of magnitude. Although we find no evidence for doping-induced polarons in P(NDI2OD-T2) upon mixing with PEI from optical absorption, more sensitive electron paramagnetic resonance measurements provide evidence for doping and an increased carrier density, at a very low level. This, in conjunction with an increased charge carrier mobility due to trap filling, results in an increase in the mixed polymer conductivity by 4 orders of magnitude relative to pure P(NDI2OD-T2). Consequently, both interfacial and bulk effects occur with notable magnitude in thin films formed from blended semiconductor polymer/PEI solution. Thus, this facile one-step procedure to form PEI interlayers must be applied with attention, as modification of the bulk semiconductor polymer (here doping) may occur simultaneously and might go un-noticed if not examined carefully.

Entities:  

Keywords:  doping; interlayer; polymer semiconductors; work function

Year:  2020        PMID: 32462863     DOI: 10.1021/acsami.0c05857

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  2 in total

1.  A high-conductivity n-type polymeric ink for printed electronics.

Authors:  Chi-Yuan Yang; Marc-Antoine Stoeckel; Tero-Petri Ruoko; Han-Yan Wu; Xianjie Liu; Nagesh B Kolhe; Ziang Wu; Yuttapoom Puttisong; Chiara Musumeci; Matteo Massetti; Hengda Sun; Kai Xu; Deyu Tu; Weimin M Chen; Han Young Woo; Mats Fahlman; Samson A Jenekhe; Magnus Berggren; Simone Fabiano
Journal:  Nat Commun       Date:  2021-04-21       Impact factor: 14.919

2.  High-Performance, Flexible NO2 Chemiresistors Achieved by Design of Imine-Incorporated n-Type Conjugated Polymers.

Authors:  Hyeonjung Park; Dong-Ha Kim; Boo Soo Ma; Euichul Shin; Youngkwon Kim; Taek-Soo Kim; Felix Sunjoo Kim; Il-Doo Kim; Bumjoon J Kim
Journal:  Adv Sci (Weinh)       Date:  2022-03-20       Impact factor: 17.521

  2 in total

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