Literature DB >> 32426961

Enhanced NO2 Sensitivity in Schottky-Contacted n-Type SnS2 Gas Sensors.

Wenjie Yan1, Chengzhai Lv1, Duan Zhang2, Yanhui Chen3, Lei Zhang4, Cormac Ó Coileáin5, Zhi Wang1, Zhaotan Jiang1, Kuan-Ming Hung6, Ching-Ray Chang7, Han-Chun Wu1.   

Abstract

Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors with high sensitivities especially in the parts per billion level is the main challenge in this rapidly developing field. Here, we show that sensitivity to NO2 (S) can be greatly improved by at least two orders of magnitude using an n-type electrode metal. Unconventionally for such devices, the ln(S) follows the classic Langmuir isotherm model rather than S as is for a p-type electrode metal. Excellent device sensitivities, as high as 13,000% for 9 ppm and 97% for 1 ppb NO2, are achieved with Mn electrodes at room temperature, which can be further tuned and enhanced with the application of a bias. Long-term stability, fast recovery, and strong selectivity toward NO2 are also demonstrated. Such impressive features provide a real solution for designing a practical high-performance layered material-based gas sensor.

Entities:  

Keywords:  Schottky barrier; SnS2; electrical contacts; gas sensor; layered materials

Year:  2020        PMID: 32426961     DOI: 10.1021/acsami.0c07193

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

1.  Gate-controlled gas sensor utilizing 1D-2D hybrid nanowires network.

Authors:  Juyeon Seo; Seung Hyun Nam; Moonsang Lee; Jin-Young Kim; Seung Gyu Kim; Changkyoo Park; Dong-Woo Seo; Young Lae Kim; Sang Sub Kim; Un Jeong Kim; Myung Gwan Hahm
Journal:  iScience       Date:  2021-12-21
  1 in total

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