| Literature DB >> 32402200 |
Yuxuan Jiang1, Mahmoud M Asmar2, Xingyue Han3, Mykhaylo Ozerov1, Dmitry Smirnov1, Maryam Salehi4, Seongshik Oh5, Zhigang Jiang6, Wang-Kong Tse2, Liang Wu3.
Abstract
When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared with the case without e-h asymmetry, the SSs now bear not only a band asymmetry, such as that in the bulk, but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap of up to 70%. Our results signify the importance of e-h asymmetry in the band engineering of TIs in the thin-film limit.Entities:
Keywords: Landau levels; Topological insulator; electron−hole asymmetry; magneto-infrared spectroscopy; quantum confinement effect
Year: 2020 PMID: 32402200 DOI: 10.1021/acs.nanolett.0c01447
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189