| Literature DB >> 32382833 |
Jing Zhou1, Jiamu Cao2,3, Jianing Shi1, Yufeng Zhang4,5, Junyu Chen1, Weiqi Wang1, Xiaowei Liu1,6.
Abstract
Hydrogen is a clean energy with high efficiency, while the storage and transport problems still prevent its extensive use. Because of the large specific surface area and unique electronic structure, two-dimensional materials have great potential in hydrogen storage. Particularly, monolayer 2H-WS2 has been proven to be suitable for hydrogen storage. But there are few studies concerning the other two phases of WS2 (1T, 1T') in hydrogen storage. Here, we carried out first-principle calculations to investigate the hydrogen adsorption behaviors of all the three phases of WS2. Multiple hydrogen adsorption studies also evaluate the hydrogen storage abilities of these materials. Comprehensive analysis results show that the 1T'-WS2 has better hydrogen storage performance than the 2H-WS2, which means phase engineering could be an effective way to improve hydrogen storage performance. This paper provides a reference for the further study of hydrogen storage in two-dimensional materials.Entities:
Keywords: First-principles; Hydrogen adsorption; Hydrogen storage; Monolayer WS2; Phases
Year: 2020 PMID: 32382833 PMCID: PMC7205947 DOI: 10.1186/s11671-020-03337-6
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Fig. 1Geometry structure, DOS, and band structure results of a 2H-WS2, b 1T-WS2, and c 1T′-WS2; yellow balls represent S, and glaucous balls represent W
Fig. 2Adsorption energy results of H2 adsorption system for a single H2 on 2H-WS2, b and c single H2 on 1T’-WS2; PDOS results of the situation with thelowest (left) or the highest (right) Ead in d 2H models and that in e 1T’ model
Fig. 3Graphs of a total adsorption energy and b average adsorption energy as a function of the number of hydrogen molecules absorbed on the 1T’- and 2H-WS2
Fig. 4PDOS results of multiple H2 adsorption systems for a all and b single hydrogen molecules on 2H-WS2 and 1T’-WS2
Fig. 5Electronic difference density of a 4H2 on 2H-WS2, b 16H2 on 2H-WS2, c 32H2 on 2H-WS2, d 64H2 on 2H-WS2, e 4H2 on 1T′-WS2, f 16H2 on 1T′-WS2, g 32H2 on 1T′-WS2, and h 64H2 on 1T′-WS2. The isosurface value is taken as 0.002 e/Å