Literature DB >> 32357345

Memory Technology - A Primer for Material Scientists.

Tony Schenk1, Milan Pesic2, Stefan Slesazeck3, Uwe Schroeder4, Thomas Mikolajick5.   

Abstract

From our own experience in the group, we know that there is quite a gap to bridge between scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an easy-to-grasp introduction to the field of memory technology for materials scientists. As an understanding of the big picture is vital, we first provide an overview about the development and architecture of memories as part of a computer and point out some basic limitations that all memories are subject to. As any new technology has to compete with mature existing solutions on the market, today's mainstream memories are explained and the need for future solutions is highlighted. The most prominent contenders in the field of emerging memories are introduced and major challenges on their way to commercialization are elucidated. Based on these discussions, we derive some predictions for the memory market to conclude the paper.
© 2020 IOP Publishing Ltd.

Keywords:  emerging memory; hard-disk drive; market trends; non-volatile memory; random-access memory; review; storage class memory

Year:  2020        PMID: 32357345     DOI: 10.1088/1361-6633/ab8f86

Source DB:  PubMed          Journal:  Rep Prog Phys        ISSN: 0034-4885


  3 in total

1.  Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates.

Authors:  Vladimir P Popov; Fedor V Tikhonenko; Valentin A Antonov; Ida E Tyschenko; Andrey V Miakonkikh; Sergey G Simakin; Konstantin V Rudenko
Journal:  Nanomaterials (Basel)       Date:  2021-01-22       Impact factor: 5.076

Review 2.  Two dimensional semiconducting materials for ultimately scaled transistors.

Authors:  Tianyao Wei; Zichao Han; Xinyi Zhong; Qingyu Xiao; Tao Liu; Du Xiang
Journal:  iScience       Date:  2022-09-20

3.  Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.

Authors:  Tobias Vogel; Alexander Zintler; Nico Kaiser; Nicolas Guillaume; Gauthier Lefèvre; Maximilian Lederer; Anna Lisa Serra; Eszter Piros; Taewook Kim; Philipp Schreyer; Robert Winkler; Déspina Nasiou; Ricardo Revello Olivo; Tarek Ali; David Lehninger; Alexey Arzumanov; Christelle Charpin-Nicolle; Guillaume Bourgeois; Laurent Grenouillet; Marie-Claire Cyrille; Gabriele Navarro; Konrad Seidel; Thomas Kämpfe; Stefan Petzold; Christina Trautmann; Leopoldo Molina-Luna; Lambert Alff
Journal:  ACS Nano       Date:  2022-09-16       Impact factor: 18.027

  3 in total

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