| Literature DB >> 32354147 |
Alaa Fathy1,2, Yasser M Sabry2,3, Martine Gnambodoe-Capochichi1, Frederic Marty1, Diaa Khalil2,3, Tarik Bourouina1,2.
Abstract
Semiconductor and micro-electromechanical system (MEMS) technologies have been already proved as strong solutions for producing miniaturized optical spectrometers, light sources and photodetectors. However, the implementation of optical absorption spectroscopy for in-situ gas analysis requires further integration of a gas cell using the same technologies towards full integration of a complete gas analysis system-on-chip. Here, we propose design guidelines and experimental validation of a gas cell fabricated using MEMS technology. The architecture is based on a circular multi-pass gas cell in a miniaturized form. Simulation results based on the proposed modeling scheme helps in determining the optimum dimensions of the gas cell, given the constraints of micro-fabrication. The carbon dioxide spectral signature is successfully measured using the proposed integrated multi-pass gas cell coupled with a MEMS-based spectrometer.Entities:
Keywords: circular multi-pass cell; gas sensing; silicon integrated
Year: 2020 PMID: 32354147 PMCID: PMC7281756 DOI: 10.3390/mi11050463
Source DB: PubMed Journal: Micromachines (Basel) ISSN: 2072-666X Impact factor: 2.891
Figure 1Schematic top views of circular multi-pass gas cells of radius . (a) Conventional. (b) Using cylindrical mirrors instead of a one-piece circular mirror. (c) Modified with cylindrical mirrors, where the last mirror of the light path is omitted. Red rays represent the central light path. The extended beam is only drawn here to avoid figure complexity. (d) Configurations for light guiding in integrated gas cells. The drawing illustrates guiding light in the plane parallel to the substrate where cylindrical mirrors are used. (e) The drawing shows a side view illustrating an alternative method for guiding light in the plane perpendicular to the substrate using the horizontal metalized silicon substrate and the metalized capping (silicon wafer). d denotes the cell height and γ is the angle between the ray and the substrate.
Figure 2(a) Three-dimensional (3D) layout of a silicon integrated gas cell. The device layer contains the gas cell. The substrate contains the gas through holes. Capping layer for covering the cell; (b) photo of the fabricated device with optical fiber light coupling in and out; (c) close view scanning electron microscope image.
Figure 3Schematic 3D view of the optical setup used for conducting gas sensing measurements using the silicon integrated multi-pass cell.
Optimum values of for different mirror reflectivity and .
|
| 0.01 | 0.03 | 0.05 | 0.07 | 0.09 | |
|---|---|---|---|---|---|---|
|
| ||||||
| 0.91 | (5, 11, 19.8) | (5, 11, 19.8) | (4, 9, 15.8) | (3, 7, 11.7) | (3, 7, 11.7) | |
| 0.93 | (6, 13, 23.8) | (5, 11, 19.8) | (4, 9, 15.8) | (3, 8, 12.9) | (3, 7, 11.7) | |
| 0.95 | (9, 19, 35.9) | (5, 12, 21.3) | (4, 9, 15.8) | (3, 8, 12.9) | (3, 7, 11.7) | |
| 0.97 | (10, 21, 39.9) | (5, 12, 21.3) | (4, 9, 15.8) | (3, 8, 12.9) | (3, 7, 11.7) | |
| 0.99 | (10, 21, 39.9) | (5, 12, 21.3) | (4, 9, 15.8) | (3, 8, 12.9) | (3, 7, 11.7) | |
Figure 4Total path length with respect to cell radius versus cell height/depth with respect to cell radius for different divergence angle in the case of (a) gold metallization. (b) Aluminum metallization. Text at every point represents ( ).
Simulated dimensions of the cell. All dimensions are in mm. is the mirror radius of curvature, and is the mirror diameter.
| Parameter | Value |
|---|---|
|
| Gold |
|
| 3 |
|
| 22, 9 |
|
| 0.19 |
|
| 8.8, 1.2 |
|
| 6.7, 1.4 |
|
| 5.3, 0.9 |
|
| 7 × 8 |
Figure 5Ray tracing for the integrated multi-pass using ZEMAX.
Figure 6Carbon dioxide measurements. (a) Carbon dioxide (CO2) absorbance at different pressures measured using the integrated multi-pass cell. (b) The corresponding absorbance at 2.01 versus different pressures. A linear fitting is also plotted.