Literature DB >> 32338518

Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices.

Zedong Yang1, Brett Heischmidt1, Sasa Gazibegovic2, Ghada Badawy2, Diana Car2, Paul A Crowell1, Erik P A M Bakkers2, Vlad S Pribiag1.   

Abstract

Signatures of Majorana zero modes (MZMs) have been observed in semiconductor nanowires (NWs) with a strong spin-orbital interaction (SOI) with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this platform requires eliminating spin degeneracy by applying a magnetic field. However, the field can adversely impact the induced superconductivity and places geometric restrictions on the device. These challenges could be circumvented by integrating magnetic elements with the NWs. Here, we report the first experimental investigation of spin transport across InSb NWs with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and reveals a regime where the device acts as a spin filter. These results open an avenue toward developing MZM devices with spin degeneracy lifted locally without external fields. They could also enable spin-based devices that leverage spin-orbital states in quantum wires.

Keywords:  1D ballistic spin transport; InSb nanowire; helical gap; semiconductor-ferromagnet quantum device

Year:  2020        PMID: 32338518     DOI: 10.1021/acs.nanolett.9b05331

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  2 in total

1.  Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy.

Authors:  Isha Verma; Valentina Zannier; Vladimir G Dubrovskii; Fabio Beltram; Lucia Sorba
Journal:  Nanomaterials (Basel)       Date:  2022-03-26       Impact factor: 5.076

2.  Electrically tunable spin-orbit interaction in an InAs nanosheet.

Authors:  Furong Fan; Yuanjie Chen; Dong Pan; Jianhua Zhao; H Q Xu
Journal:  Nanoscale Adv       Date:  2022-05-10
  2 in total

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