Literature DB >> 32260668

Doping two-dimensional materials: ultra-sensitive sensors, band gap tuning and ferromagnetic monolayers.

Simin Feng1, Zhong Lin, Xin Gan, Ruitao Lv, Mauricio Terrones.   

Abstract

The successful isolation of graphene from graphite in 2004 opened up new avenues to study two-dimensional (2D) systems from layered materials. Since then, research on 2D materials, including graphene, hexagonal-BN (h-BN), transition metal dichalcogenides (TMDs) and black phosphorous, has been extensive, thus leading to various possible applications in the fields of optoelectronics, biomedicine, spintronics, electrochemistry, energy storage and catalysis. However, certain barriers still need to be overcome when dealing with real applications, such as graphene's lack of a bandgap, restricting its use in semiconductor electronics. In this context, a possible solution is to tailor the electronic and optical properties of 2D materials by introducing defects or elemental doping. Although defects play a major role in modifying materials properties, the fact that we call them "defects" might have a negative impact. There has been a long debate on whether structurally perfect materials are equally relevant for modifying the properties and for applications. In this focus article, we clarify that although extra large amounts of defects could be detrimental to the materials properties, well-designed defects might lead to unprecedented properties and interesting applications that pristine materials do not have. Given the relatively short history of research on doped 2D layered materials, our objective is to answer and clarify the following fundamental questions: why does nanomaterial doping offer improved physico-chemical properties? What new applications arise from doping? And what are the current challenges along this line?

Entities:  

Year:  2017        PMID: 32260668     DOI: 10.1039/c6nh00192k

Source DB:  PubMed          Journal:  Nanoscale Horiz        ISSN: 2055-6756            Impact factor:   10.989


  5 in total

1.  Two-dimensional semiconductors pave the way towards dopant-based quantum computing.

Authors:  José Carlos Abadillo-Uriel; Belita Koiller; María José Calderón
Journal:  Beilstein J Nanotechnol       Date:  2018-10-12       Impact factor: 3.649

Review 2.  Janus 2D materials via asymmetric molecular functionalization.

Authors:  Verónica Montes-García; Paolo Samorì
Journal:  Chem Sci       Date:  2021-11-19       Impact factor: 9.825

3.  Doping-free bandgap tunability in Fe2O3 nanostructured films.

Authors:  Sujit A Kadam; Giang Thi Phan; Duy Van Pham; Ranjit A Patil; Chien-Chih Lai; Yan-Ruei Chen; Yung Liou; Yuan-Ron Ma
Journal:  Nanoscale Adv       Date:  2021-07-29

4.  Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping.

Authors:  Shijie Li; Shidai Tian; Yuan Yao; Meng He; Li Chen; Yan Zhang; Junyi Zhai
Journal:  Nanomaterials (Basel)       Date:  2021-03-18       Impact factor: 5.076

Review 5.  Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications.

Authors:  Hocheon Yoo; Keun Heo; Md Hasan Raza Ansari; Seongjae Cho
Journal:  Nanomaterials (Basel)       Date:  2021-03-24       Impact factor: 5.076

  5 in total

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