| Literature DB >> 32216332 |
Mingxin Hu1, Shanshan Jia1, Yucheng Liu1, Jian Cui1, Yunxia Zhang1, Han Su1, Shuqing Cao1, Lihong Mo1, Depeng Chu1, Guangtao Zhao1, Kui Zhao1, Zhou Yang1, Shengzhong Frank Liu1,2.
Abstract
Lead halide perovskites with good optoelectronic properties and high attenuation of high-energy radiation are great candidates for X-ray radiation detectors. Large area, dense, and thick films or wafers are a prerequisite for these applications. In this paper, a one-step heat-assisted high-pressure press method is developed to directly prepare a large (the largest has a diameter of 80 mm) and thickness- and shape-controlled phase-pure organic-inorganic hybrid CH3NH3PbI3 wafer of densely packed large microcrystals from raw powder materials. Meanwhile, this method uses no solvent to achieve essentially 100% material utilization. The obtained wafers show good ambipolar carrier mobilities of ∼20 cm2 V-1 s-1 and a μτ product as high as 3.84 × 10-4 cm2 V-1. Under an X-ray source using an acceleration voltage of 40 kV, the perovskite wafer-based X-ray detector shows an X-ray sensitivity as large as 1.22 × 105 μC Gyair-1 cm-2 under a 10 V bias, the highest reported for any perovskite material. The method provides a convenient strategy for producing large perovskite wafers with good optoelectronic properties, which will facilitate the development of large perovskite devices.Entities:
Keywords: X-ray detector; large size wafer; optoelectronic properties; perovskite; sensitivity
Year: 2020 PMID: 32216332 DOI: 10.1021/acsami.9b23158
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229