M Younus Ali1, M K R Khan1, A M M Tanveer Karim2, M Mozibur Rahman1, M Kamruzzaman3. 1. Department of Physics, University of Rajshahi, Rajshahi-6205, Bangladesh. 2. Department of Physics, Rajshahi University of Engineering and Technology, Rajshahi-6204, Bangladesh. 3. Department of Physics, Begum Rokeya University, Rangpur, Rangpur 5400, Bangladesh.
Abstract
Nano-fiber structure of ZnO and Ni doped ZnO (Ni:ZnO) transparent thin films have been deposited on glass substrate at 350 °C at an ambient atmosphere via spray pyrolysis technique. The structural, surface morphological and opto-electrical properties of ZnO and Ni doped ZnO thin films have been investigated. The XRD patterns show that the films are of polycrystalline in nature having preferential orientation (0 0 2) plane for ZnO changes to (1 0 1) by Ni doping in ZnO matrix. Optical study exhibits red shifting in band gap energy with Ni doping due to sp-d hybridization and display high absorption coefficient of the order of 107 m-1. The photoluminescence (PL) spectra indicate blue emissions in all samples. Electrical measurement confirms the resistivity of the film decreases remarkably with Ni doping and electrical transport is mainly thermally activated. From Hall Effect study, it is confirmed that all the samples are n-type having carrier concentration of the order of 1018 cm-3. Both mobility and carrier concentrations of the films became higher than ZnO sample with the increase of Ni concentration.
n class="Chemical">Nanpan>o-fiber structure of pan> class="Chemical">ZnO and Ni dopedZnO (Ni:ZnO) transparent thin films have been deposited on glass substrate at 350 °C at an ambient atmosphere via spray pyrolysis technique. The structural, surface morphological and opto-electrical properties of ZnO and Ni dopedZnO thin films have been investigated. The XRD patterns show that the films are of polycrystalline in nature having preferential orientation (0 0 2) plane for ZnO changes to (1 0 1) by Ni doping in ZnO matrix. Optical study exhibits red shifting in band gap energy with Ni doping due to sp-d hybridization and display high absorption coefficient of the order of 107 m-1. The photoluminescence (PL) spectra indicate blue emissions in all samples. Electrical measurement confirms the resistivity of the film decreases remarkably with Ni doping and electrical transport is mainly thermally activated. From Hall Effect study, it is confirmed that all the samples are n-type having carrier concentration of the order of 1018 cm-3. Both mobility and carrier concentrations of the films became higher than ZnO sample with the increase of Ni concentration.
Authors: Usman Isyaku Bature; Illani Mohd Nawi; Mohd Haris Md Khir; Furqan Zahoor; Abdullah Saleh Algamili; Saeed S Ba Hashwan; Mohd Azman Zakariya Journal: Materials (Basel) Date: 2022-02-05 Impact factor: 3.623