| Literature DB >> 32195402 |
M Younus Ali1, M K R Khan1, A M M Tanveer Karim2, M Mozibur Rahman1, M Kamruzzaman3.
Abstract
Nano-fiber structure of ZnO and Ni doped ZnO (Ni:ZnO) transparent thin films have been deposited on glass substrate at 350 °C at an ambient atmosphere via spray pyrolysis technique. The structural, surface morphological and opto-electrical properties of ZnO and Ni doped ZnO thin films have been investigated. The XRD patterns show that the films are of polycrystalline in nature having preferential orientation (0 0 2) plane for ZnO changes to (1 0 1) by Ni doping in ZnO matrix. Optical study exhibits red shifting in band gap energy with Ni doping due to sp-d hybridization and display high absorption coefficient of the order of 107 m-1. The photoluminescence (PL) spectra indicate blue emissions in all samples. Electrical measurement confirms the resistivity of the film decreases remarkably with Ni doping and electrical transport is mainly thermally activated. From Hall Effect study, it is confirmed that all the samples are n-type having carrier concentration of the order of 1018 cm-3. Both mobility and carrier concentrations of the films became higher than ZnO sample with the increase of Ni concentration.Entities:
Keywords: Activation energy; Band gap; Materials science; Semiconductor; Thin films
Year: 2020 PMID: 32195402 PMCID: PMC7078279 DOI: 10.1016/j.heliyon.2020.e03588
Source DB: PubMed Journal: Heliyon ISSN: 2405-8440