Literature DB >> 32167339

Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain.

K H A Villegas1, F V Kusmartsev2,3, Y Luo2, I G Savenko1,4.   

Abstract

We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to terahertz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), which is required for numerous biological applications.

Entities:  

Year:  2020        PMID: 32167339     DOI: 10.1103/PhysRevLett.124.087701

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Harmonic Generation in Biased Semiconductor Superlattices.

Authors:  Mauro Fernandes Pereira
Journal:  Nanomaterials (Basel)       Date:  2022-04-28       Impact factor: 5.719

2.  Perfect Impedance Matching with Meta-Surfaces Made of Ultra-Thin Metal Films: A Phenomenological Approach to the Ideal THz Sensors.

Authors:  Binglei Zhang; Yang Liu; Yi Luo; Feodor V Kusmartsev; Anna Kusmartseva
Journal:  Materials (Basel)       Date:  2020-11-28       Impact factor: 3.623

  2 in total

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