| Literature DB >> 32150384 |
Yu-Chuan Lin1, Chenze Liu2, Yiling Yu1, Eva Zarkadoula3, Mina Yoon1, Alexander A Puretzky1, Liangbo Liang1, Xiangru Kong1, Yiyi Gu2,4, Alex Strasser1,5, Harry M Meyer1, Matthias Lorenz1, Matthew F Chisholm1, Ilia N Ivanov1, Christopher M Rouleau1, Gerd Duscher2, Kai Xiao1, David B Geohegan1.
Abstract
Atomically thin two-dimensional (2D) materials face significant energy barriers for synthesis and processing into functional metastable phases such as Janus structures. Here, the controllable implantation of hyperthermal species from pulsed laser deposition (PLD) plasmas is introduced as a top-down method to compositionally engineer 2D monolayers. The kinetic energies of Se clusters impinging on suspended monolayer WS2 crystals were controlled in the <10 eV/atom range with in situ plasma diagnostics to determine the thresholds for selective top layer replacement of sulfur by selenium for the formation of high quality WSSe Janus monolayers at low (300 °C) temperatures and bottom layer replacement for complete conversion to WSe2. Atomic-resolution electron microscopy and spectroscopy in tilted geometry confirm the WSSe Janus monolayer. Molecular dynamics simulations reveal that Se clusters implant to form disordered metastable alloy regions, which then recrystallize to form highly ordered structures, demonstrating low-energy implantation by PLD for the synthesis of 2D Janus layers and alloys of variable composition.Entities:
Keywords: 2D materials; Janus monolayer; conversion; implantation; pulsed laser deposition; synthesis and processing; transition-metal dichalcogenide
Year: 2020 PMID: 32150384 DOI: 10.1021/acsnano.9b10196
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881