3D Integrable W/SiNx/n-Si/p-Si 1D1R Unipolar Resistive Random Access Memory Synapse for Suppressing Reverse Leakage in Spiking Neural Network.

In this paper, we pose reverse leakage current issue which occurs when resistive random access memory (RRAM) is used as synapse for spiking neural networks (SNNs). To prevent this problem, 1 diode-1 RRAM (1D1R) synapse is suggested and simulated to examine their current rectifying chracteristics, Furthermore, high density of 1 K 3D 1D1R synapse array structure and its process flow are proposed.