| Literature DB >> 32103095 |
Hiroyoshi Nobukane1,2, Kosei Yanagihara3, Yuji Kunisada4, Yunito Ogasawara3, Kakeru Isono3, Kazushige Nomura3, Keita Tanahashi4, Takahiro Nomura4, Tomohiro Akiyama5,4, Satoshi Tanda5,6.
Abstract
By tuning the physical and chemical pressures of layered perovskite materials we can realize the quantum states of both superconductors and insulators. By reducing the thickness of a layered crystal to a nanometer level, a nanofilm crystal can provide novel quantum states that have not previously been found in bulk crystals. Here we report the realization of high-temperature superconductivity in Ca2RuO4 nanofilm single crystals. Ca2RuO4 thin film with the highest transition temperature Tc (midpoint) of 64 K exhibits zero resistance in electric transport measurements. The superconducting critical current exhibited a logarithmic dependence on temperature and was enhanced by an external magnetic field. Magnetic measurements revealed a ferromagnetic transition at 180 K and diamagnetic magnetization due to superconductivity. Our results suggest the co-appearance of superconductivity and ferromagnetism in Ca2RuO4 nanofilm crystals. We also found that the induced bias current and the tuned film thickness caused a superconductor-insulator transition. The fabrication of micro-nanocrystals made of layered material enables us to discuss rich superconducting phenomena in ruthenates.Entities:
Year: 2020 PMID: 32103095 PMCID: PMC7044234 DOI: 10.1038/s41598-020-60313-x
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Electric transport properties in Ca2RuO4 nanofilm crystals. (a) Powder X-ray diffraction patterns at room temperature for Ca2RuO4. (b) Temperature dependence of the longitudinal resistivity ρ for Ca2RuO4 nanofilm crystals. Dependence of the magnetic susceptibility M/H on temperature in an FC process of 10 Oe for powders weighing 5.2 mg (sample A). (c) Temperature dependence of ρ at 10 nA for samples 1 and 3 when the magnetic field is applied parallel to the c axis. Dependence of M/H on temperature in 7 T for sample A. (d) I − V characteristics in various magnetic fields for sample 3. Supercurrent was observed. (e) Dependence of the critical current I on temperature in B = 0. The blue solid and dotted lines represent fitting results for the critical current in chiral p-wave and s-wave states, respectively. The inset shows I − V characteristics for various temperatures in sample 3. Hysteresis behaviour was observed in the low bias current region. Numbered arrows represent the bias current direction.
Figure 2Magnetic measurements. (a) and (b) Temperature dependence of magnetic susceptibility measured in the FC process for samples A and B. The inset shows an enlargement of the dependence of the magnetization on temperature around TCurie measured at 10 Oe. (c) and (d) Dependence of diamagnetic susceptibility on temperature for various magnetic fields in samples A and B. (e) Temperature dependence of magnetic susceptibility for FC from 145 to 2 K in various magnetic fields after cooling from 190 to 145 K while applying a magnetic field of 5000 Oe. (f) Dependence of diamagnetic susceptibility on temperature for magnetic fields in sample B. (g) Comparison of diamagnetic susceptibility at 5 Oe in two different FC measurements. The purple plot was measured by FC at 5 Oe from 190 to 2 K. The red plot was measured by FC at 5 Oe from 145 to 2 K after cooling from 195 to 145 K while maintaining a magnetic field of 5000 Oe. Larger diamagnetism was observed by aligning the direction of the ferromagnetic magnetization.
Figure 3Superconductor-insulator transition. (a) Temperature dependence of the sheet resistance R□/ for sample 2 with a thickness of 10 nm. (b) Sheet resistance R□/ as a function of bias current I for temperatures ranging from 4.2 to 20 K. The inset shows the scaling dependence of R□/ as a function of the scaling variable in the 4.2 to 20 K range where the values IQCP1 = 100 nA and zν = 1.5 are used. The critical sheet resistance RQCP1 was 16.5 k. (c) R□/ as a function of I for temperatures ranging from 30 to 45 K. The inset shows the scaling plot of R□/ as a function of in the high temperature region, which corresponds to zν ≃ 0.64. (d) Normalized (dR□//dI) as a function of T −1. Below , two-stage current-induced critical points were observed. The inset shows the hysteresis behaviour at 10 K in the low bias current region. Schematic of superconducting domains coupled by tunneling junctions (lower inset). (e) Scaling dependence of as a function of corresponding to zν = 0.68 from 4.2 to 50 K. The scaling data were obtained from I − V curves for sample 4 (inset). (f) Temperature dependence of the resistivity ρ for Ca2RuO4 single crystals with different thicknesses. Bias-current dependence is shown for samples 2 and 4.
Figure 4Relationship between the ground state of Ca2RuO4 and the degree of distortion of RuO6 octahedra. Comparison of the ground states in bulk and Ca2RuO4 nanofilm crystals. The results of our first-principle calculations for mono-, bi-, tri-layer and bulk Ca2RuO4 are shown in Table. The Ca2RuO4 thin film has weak distortions of RuO6 compared with stacked bulk crystals.