| Literature DB >> 32098971 |
Alexantrou Serb1, Andrea Corna2, Richard George3, Ali Khiat1, Federico Rocchi2, Marco Reato2, Marta Maschietto2, Christian Mayr3, Giacomo Indiveri4, Stefano Vassanelli5, Themistoklis Prodromakis6.
Abstract
Brain function relies on circuits of spiking neurons with synapses playing the key role of merging transmission with memory storage and processing. Electronics has made important advances to emulate neurons and synapses and brain-computer interfacing concepts that interlink brain and brain-inspired devices are beginning to materialise. We report on memristive links between brain and silicon spiking neurons that emulate transmission and plasticity properties of real synapses. A memristor paired with a metal-thin film titanium oxide microelectrode connects a silicon neuron to a neuron of the rat hippocampus. Memristive plasticity accounts for modulation of connection strength, while transmission is mediated by weighted stimuli through the thin film oxide leading to responses that resemble excitatory postsynaptic potentials. The reverse brain-to-silicon link is established through a microelectrode-memristor pair. On these bases, we demonstrate a three-neuron brain-silicon network where memristive synapses undergo long-term potentiation or depression driven by neuronal firing rates.Entities:
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Year: 2020 PMID: 32098971 PMCID: PMC7042282 DOI: 10.1038/s41598-020-58831-9
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Synaptors connect silicon and brain neurons in hybrid network. (a) Sketch of the main components of the hybrid circuit and of the synaptors. AN and ANpost are silicon spiking neurons of a VLSI network[28,35] (SNN), while MR1 and MR2 are Pt/TiOx/Pt memristors[36]. The capacitive Al/TiO2 electrode, CME, is an element of the multi electrode array, CMEA (Supplementary Fig. 1) where rat hippocampal neurons are cultured on the functionalized surface of the TiO2 thin film. One neuron is contacted by a patch-clamp pipette, P, for intracellular whole-cell recording. The two synaptors, AB and BA, connect the ‘presynaptic’ silicon neuron (AN) to the brain neuron (BN), and BN to the ‘postsynaptic’ silicon neuron, ANpost. The two memristors, MR1 and MR2, emulate plasticity in the two synaptors, whereas electronics-to-BN and BN-to-electronics signal transmission are mediated by the CME and the patch-clamp electrode. (b) Operational scheme. In AB, changes in MR1 resistive states, R(t), are driven by AN and BN depolarisations rates according to an approximated BCM plasticity rule (Supplementary Table 1 and Supplementary Fig. 3) resulting in either LTP (red), LTD (blue) or no change. MR1 resistive states are translated into weighted voltage stimuli. These are delivered to BN through the CME capacitance (CCME) causing EPSP-like depolarisations, in turn leading to action potential firing (Supplementary Fig. 1). Similarly, in BA, BN spikes are recorded by the patch-clamp electrode through its resistance, Rp, threshold-detected and then transmitted to ANpost as current injections that are adjusted via MR2 weights.
Figure 2AB plasticity in geographically distributed hybrid circuit. (a) Activity pattern of the pacemaker artificial neuron AN. Firing frequency is modulated in four phases, targeting the induction of plasticity as per the sequence: none/LTP/none/LTD, using the chosen plasticity rule. (b) BN firing response to AB inputs. After LTP induction, the origianl 10 Hz pacemaker stimulation becomes capable of eliciting BN action potentials, thus reflecting the increase of postsynaptic potential amplitudes to above therhold. Firing persists until the commencement of the depotentiation/depression phase. (c) MR2 weight evolution. Data points denote resistance values for the intended LTP (red), LTD (blue) or no polarity change (black) phases. The right vertical axis indicates the correpsonding weight. X-axis common to all panels.
Figure 3Geographically distributed circuit: return pathway. (a) BN firing rate with shadowed areas inidcating plasticity polarity at AB (above the dashed line) and BA (below the deshed line). (b) ANpost spiking frequency. An increase of spiking activity (expressed as percentage of variation) is observed in the middle of the run in coincidence with BN firing followed by a return to baseline. (c) BA weight evolution. The low-rate spiking of BN and ANpost caused a strong depression trend (blue) only temporarily reverting to ‘none’ (black) during BN excitation and synchronization of the two neurons. X-axis common to all panels.