| Literature DB >> 32080279 |
Beikai Zhao1, Peng Huang1, Libo Zhang2, Suzhi Li2, Ze Zhang1, Qian Yu3.
Abstract
Alloying elements have great influence on mechanical properties of metals. Combining dislocation characterization and in-situ transmission electron microscope straining at ambient and liquid-nitrogen temperature in high-purity titanium and Ti-5at%Al, we investigated the modulation of Al on dislocation behaviours as temperature changed. It reveals that segregation of Al at edge dislocation cores in Ti-5at%Al generates strong obstacles, promoting room temperature cross-slips. However, the effect of Al on reducing stacking-fault energy (SFE) as decreasing temperature is significant. Consequently, the lower SFE in Ti-5at%Al results in ordinary planar dislocation slip while massive dislocation cross-slips occurred in Ti at liquid-nitrogen temperature.Entities:
Year: 2020 PMID: 32080279 PMCID: PMC7033204 DOI: 10.1038/s41598-020-60013-6
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1(a) HAADF-STEM image of the screw dislocation core and EDS scanning results of (b) Ti element distribution and (c) Al element distribution; (d) HAADF-STEM image of the edge dislocation core with two half atom surface (, ) and EDS scanning results of (e) Ti element distribution and (f) Al element distribution. All the beam direction is .
Figure 2Screw dislocation movements in Ti (a–c) with g = and (d) with g = at room temperature. Screw dislocation movements in Ti-5at%Al (e–g) with g = and (h) with g = which are same as (d) and (a–c) specifically at room temperature.
Figure 3Screw dislocation movements in Ti (a) with g = and (b–d) with g = at liquid-nitrogen temperature. Screw dislocation movements in Ti-5at%Al (e) with g =and (f) with the same g = as (b–d) at liquid-nitrogen temperature.
Figure 4General stacking fault energy γ-surface in prismatic plane {100} for (a) high-purity Ti and (b) Ti-5at%Al. The black dashed lines identify minimum energy path when sliding along a ([110]) direction. (c) The variation of stacking fault energy with temperatures ranging from 77 K to 230 K for high-purity Ti and Ti-5at%Al.