Literature DB >> 32071758

A new pseudopolymorph of perchlorinated neo-penta-silane: the benzene monosolvate Si(SiCl3)4·C6H6.

Jan Tillmann1, Hans-Wolfram Lerner1, Michael Bolte1.   

Abstract

A new pseudopolymorph of dodeca-chloro-penta-silane, namely a benzene monosolvate, Si5Cl12·C6H6, is described. There are two half mol-ecules of each kind in the asymmetric unit. Both Si5Cl12 mol-ecules are completed by crystallographic twofold symmetry. One of the benzene mol-ecules is located on a twofold rotation axis with two C-H groups located on this rotation axis. The second benzene mol-ecule has all atoms on a general position: it is disordered over two equally occupied orientations. No directional inter-actions beyond normal van der Waals contacts occur in the crystal. © Tillmann et al. 2020.

Entities:  

Keywords:  co-crystal; crystal structure; polymorphism; solvate

Year:  2020        PMID: 32071758      PMCID: PMC7001847          DOI: 10.1107/S2056989020000900

Source DB:  PubMed          Journal:  Acta Crystallogr E Crystallogr Commun


Chemical context

Since the 1980s, silicon hydrides, such as Si(SiH3)4, have attracted considerable attention as precursors for the liquid phase deposition (LPD) of silicon thin films (Nishimura et al., 1985 ▸). In this context it should be noted that the perchlorinated neo­penta­silane Si(SiCl3)4 (Si5Cl12) is easily accessible in large amounts by the amine-induced disproportionation (Meyer-Wegner et al., 2011 ▸; Tillmann et al., 2012 ▸) of perchloro­polysilanes, e.g. Si2Cl6 or Si3Cl8 (Meyer-Wegner et al., 2011 ▸; Urry, 1970 ▸). Subsequent hydrogenation of Si(SiCl3)4 (I) then yields the neo­penta­silane Si(SiH3)4, which can be used as an LPD agent (Cannady & Zhou, 2008 ▸) (see Fig. 1 ▸).
Figure 1

Amine-induced disproportionation of Si2Cl6 and Si3Cl8: (i) + NMe3, or NMe2Et, or NEt3 in benzene at room temperature; (ii) + LiAlH4 in diethyl ether at room temperature

In this paper we describe the structure of a new pseudo-polymorph of perchlorinated neo­penta­silane (I), namely the benzene monosolvate Si(SiCl3)4·C6H6, and make a comparison of its structure with those of Si(SiCl3)4 (Meyer-Wegner et al., 2011 ▸) and Si(SiCl3)4·SiCl4 (Fleming, 1972 ▸).

Structural commentary

There are two half mol­ecules of each kind in the asymmetric unit of (I). Both Si5Cl12 mol­ecules are completed by crystallographic twofold symmetry, with the rotation axes orientated in the [110] and [10] directions and the central Si atom located on the axis (Fig. 2 ▸). One of the benzene mol­ecules is located on a twofold rotation axis propagating along the a or b axes with two C—H groups located on this rotation axis. The second benzene mol­ecule has all atoms on general positions: it is disordered over two equally occupied orientations about a twofold rotation axis running in the [100] and [010] directions.
Figure 2

A perspective view of the title compound. Displacement ellipsoids are drawn at the 50% probability level. Symmetry codes: (i) −y, −x, −z + ; (ii) 1 − y, 1 − x, −z + ; (iii) −x, y, −z; (iv) 1 − x, y, −z.

Supra­molecular features

A view of the mol­ecular packing of (I) (Fig. 3 ▸) reveals that the benzene mol­ecules fill the voids between the dodeca­chloro­penta­silane mol­ecules. There are no identified directional inter­molecular inter­actions.
Figure 3

Packing diagram of the title compound viewed down [010].

Database survey

There are two already known structures of dodeca­chloro­penta­silane: first, there is pure Si5Cl12 (Meyer-Wegner et al., 2011 ▸; CCDC deposition number 793308) and second, a co-crystal with silicon tetra­chloride (Fleming, 1972 ▸; CCDC deposition number 1592571). In each of these structures, the Si5Cl12 mol­ecule is located on a special position. As noted above, in (I), both mol­ecules in the asymmetric unit are found on a twofold rotation axis. Compound (II) also crystallizes with two mol­ecules in the asymmetric unit. One of them is located on a threefold rotation axis and the other is disordered about a special position of site symmetry . In the second mol­ecule, it is noteworthy that only the Si atoms carrying the Cl atoms are disordered: the central Si atom and the Cl atoms themselves are not disordered. In (III), the Si5Cl12 mol­ecule is located on a special position of site symmetry 23. The central Si atom is located at the inter­section of the twofold and the threefold rotation axes (the twofold rotation axis coincides with a axis). The Si—Si and Si—Cl bond lengths in all three structures agree well (Table 1 ▸).
Table 1

Bond lengths (Å) in the different structures containing Si5Cl12 mol­ecules

For (I), mean values of the two mol­ecules are given. For (II), mean values of the non-disordered mol­ecule are given. Because of the high symmetry of (III), there is only one value for each bond length.

 Si—SiSi—Cl
(I)2.3242.019
(II)2.3402.026
(III)2.332 (9)1.994 (7)

Synthesis and crystallization

The perchlorinated neo­penta­silane (I) was synthesized according to a literature procedure (Kaczmarczyk & Urry, 1960 ▸). Single crystals of Si(SiCl3)4·C6H6 were grown from a solution of Si(SiCl3)4 in benzene after one week at room temperature. Si(SiCl (I). 29Si{1H}NMR (C6D6, external TMS): δ = −80.9 [Si(SiCl3)4], δ = 3.5 [Si(SiCl3)4].

Refinement

Crystal data, data collection and structure refinement details are summarized in Table 2 ▸. The H atoms were refined using a riding model with C—H = 0.95 Å and with U iso(H) = 1.2U eq(C). One of the benzene mol­ecules is disordered over two equally occupied orientations: its carbon atoms were isotropically refined. The C—C distances in the non-disordered benzene mol­ecule were restrained to 1.390 (2) Å. The crystal chosen for data collection was found to crystallize as a racemic twin.
Table 2

Experimental details

Crystal data
Chemical formulaCl12Si5·C6H6
M r 643.96
Crystal system, space groupTetragonal, P4122
Temperature (K)173
a, c (Å)11.9633 (4), 33.7848 (16)
V3)4835.3 (4)
Z 8
Radiation typeMo Kα
μ (mm−1)1.62
Crystal size (mm)0.28 × 0.18 × 0.16
 
Data collection
DiffractometerStoe IPDS II two-circle
Absorption correctionMulti-scan (X-AREA; Stoe & Cie, 2001)
T min, T max 0.803, 1.0
No. of measured, independent and observed [I > 2σ(I)] reflections39180, 5189, 4790
R int 0.047
(sin θ/λ)max−1)0.642
 
Refinement
R[F 2 > 2σ(F 2)], wR(F 2), S 0.027, 0.075, 1.08
No. of reflections5189
No. of parameters207
No. of restraints5
H-atom treatmentH-atom parameters constrained
Δρmax, Δρmin (e Å−3)0.39, −0.42
Absolute structureFlack x determined using 1905 quotients [(I +)−(I )]/[(I +)+(I )] (Parsons et al., 2013)
Absolute structure parameter0.48 (5)

Computer programs: X-AREA (Stoe & Cie, 2001 ▸), SHELXS97 (Sheldrick, 2008 ▸), XP in SHELXTL-Plus (Sheldrick, 2008 ▸), SHELXL2018 (Sheldrick, 2015 ▸) and publCIF (Westrip, 2010 ▸).

Crystal structure: contains datablock(s) I, global. DOI: 10.1107/S2056989020000900/hb7874sup1.cif Structure factors: contains datablock(s) I. DOI: 10.1107/S2056989020000900/hb7874Isup2.hkl CCDC reference: 1979631 Additional supporting information: crystallographic information; 3D view; checkCIF report
Cl12Si5·C6H6Dx = 1.769 Mg m3
Mr = 643.96Mo Kα radiation, λ = 0.71073 Å
Tetragonal, P4122Cell parameters from 62511 reflections
a = 11.9633 (4) Åθ = 1.9–27.6°
c = 33.7848 (16) ŵ = 1.62 mm1
V = 4835.3 (4) Å3T = 173 K
Z = 8Block, colourless
F(000) = 25280.28 × 0.18 × 0.16 mm
Stoe IPDS II two-circle diffractometer4790 reflections with I > 2σ(I)
ω scansRint = 0.047
Absorption correction: multi-scan (X-AREA; Stoe & Cie, 2001)θmax = 27.1°, θmin = 1.8°
Tmin = 0.803, Tmax = 1.0h = −14→15
39180 measured reflectionsk = −15→15
5189 independent reflectionsl = −43→43
Refinement on F2Hydrogen site location: mixed
Least-squares matrix: fullH-atom parameters constrained
R[F2 > 2σ(F2)] = 0.027w = 1/[σ2(Fo2) + (0.0375P)2 + 2.8317P] where P = (Fo2 + 2Fc2)/3
wR(F2) = 0.075(Δ/σ)max = 0.001
S = 1.08Δρmax = 0.39 e Å3
5189 reflectionsΔρmin = −0.42 e Å3
207 parametersAbsolute structure: Flack x determined using 1905 quotients [(I+)-(I-)]/[(I+)+(I-)] (Parsons et al., 2013)
5 restraintsAbsolute structure parameter: 0.48 (5)
Primary atom site location: structure-invariant direct methods
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.
xyzUiso*/UeqOcc. (<1)
Si10.54973 (7)0.45027 (7)0.1250000.0222 (3)
Si20.38834 (7)0.45056 (7)0.08678 (2)0.02447 (19)
Si30.54972 (8)0.29277 (8)0.16530 (3)0.0264 (2)
Cl210.40377 (8)0.34525 (8)0.04060 (2)0.0400 (2)
Cl220.25695 (7)0.39988 (8)0.11990 (3)0.0387 (2)
Cl230.35776 (8)0.60671 (7)0.06658 (3)0.0384 (2)
Cl310.49743 (8)0.15929 (7)0.13366 (3)0.0408 (2)
Cl320.70602 (8)0.26452 (9)0.18579 (3)0.0453 (2)
Cl330.44514 (8)0.31660 (9)0.21128 (3)0.0412 (2)
Si40.04988 (7)−0.04988 (7)0.1250000.0225 (3)
Si50.05165 (7)0.11311 (7)0.16232 (2)0.02420 (19)
Si60.20502 (8)−0.05209 (8)0.08356 (3)0.0263 (2)
Cl51−0.05058 (7)0.09833 (8)0.20938 (2)0.0382 (2)
Cl52−0.00287 (8)0.24225 (7)0.12875 (3)0.0367 (2)
Cl530.20867 (7)0.14553 (8)0.18124 (3)0.0379 (2)
Cl610.23134 (9)0.10282 (8)0.06166 (3)0.0449 (2)
Cl620.17856 (9)−0.15973 (8)0.03862 (2)0.0414 (2)
Cl630.34091 (8)−0.10198 (9)0.11430 (3)0.0424 (2)
C10.0000000.3434 (6)0.0000000.100 (4)
H10.0000000.2639810.0000000.120*
C20.0511 (5)0.4024 (4)0.03030 (13)0.094 (2)
H20.0871690.3635050.0512310.113*
C30.0495 (5)0.5176 (4)0.03001 (14)0.090 (2)
H30.0837170.5565960.0512840.107*
C40.0000000.5786 (7)0.0000000.087 (3)
H40.0000000.6579840.0000000.104*
C50.5409 (8)0.8628 (10)0.0236 (3)0.051 (2)*0.5
H50.5709430.8062360.0401960.062*0.5
C60.5561 (8)0.9738 (11)0.0335 (3)0.050 (2)*0.5
H60.5943850.9929100.0572050.059*0.5
C70.5158 (9)1.0566 (8)0.0092 (3)0.054 (3)*0.5
H70.5270351.1329870.0157320.065*0.5
C5'0.5145 (10)0.8339 (8)0.0086 (3)0.057 (3)*0.5
H5'0.5260880.7572640.0146870.068*0.5
C6'0.5559 (9)0.9177 (12)0.0335 (3)0.058 (2)*0.5
H6'0.5949910.8972990.0569420.069*0.5
C7'0.5410 (10)1.0290 (11)0.0247 (4)0.062 (3)*0.5
H7'0.5695341.0853790.0417830.074*0.5
U11U22U33U12U13U23
Si10.0213 (4)0.0213 (4)0.0241 (6)0.0004 (5)0.0008 (3)0.0008 (3)
Si20.0245 (4)0.0238 (4)0.0251 (4)0.0000 (3)−0.0010 (3)0.0009 (3)
Si30.0252 (4)0.0247 (4)0.0294 (4)0.0001 (4)−0.0007 (3)0.0046 (3)
Cl210.0521 (5)0.0364 (5)0.0316 (4)−0.0014 (4)0.0003 (4)−0.0084 (3)
Cl220.0269 (4)0.0476 (5)0.0418 (4)−0.0054 (4)0.0051 (3)0.0042 (4)
Cl230.0464 (5)0.0278 (4)0.0411 (4)0.0058 (4)−0.0079 (4)0.0060 (3)
Cl310.0452 (5)0.0268 (4)0.0503 (5)−0.0048 (4)−0.0003 (4)−0.0032 (4)
Cl320.0317 (4)0.0461 (5)0.0579 (5)0.0068 (4)−0.0113 (4)0.0116 (4)
Cl330.0406 (5)0.0529 (6)0.0302 (4)−0.0059 (4)0.0065 (4)0.0031 (4)
Si40.0214 (4)0.0214 (4)0.0245 (6)0.0000 (5)0.0006 (3)0.0006 (3)
Si50.0236 (4)0.0242 (4)0.0248 (4)−0.0008 (3)−0.0010 (3)−0.0011 (3)
Si60.0248 (4)0.0259 (4)0.0282 (4)0.0001 (4)0.0038 (3)0.0010 (3)
Cl510.0366 (5)0.0486 (5)0.0295 (4)0.0010 (4)0.0072 (3)−0.0013 (4)
Cl520.0436 (5)0.0268 (4)0.0398 (4)0.0039 (4)−0.0050 (4)0.0042 (3)
Cl530.0282 (4)0.0428 (5)0.0429 (4)−0.0063 (4)−0.0069 (3)−0.0033 (4)
Cl610.0489 (5)0.0325 (4)0.0533 (5)−0.0063 (4)0.0126 (4)0.0108 (4)
Cl620.0520 (5)0.0404 (5)0.0317 (4)0.0053 (4)0.0022 (4)−0.0084 (4)
Cl630.0274 (4)0.0505 (5)0.0494 (5)0.0067 (4)−0.0039 (4)0.0003 (4)
C10.074 (6)0.043 (4)0.184 (11)0.0000.056 (7)0.000
C20.068 (4)0.147 (7)0.067 (4)0.011 (4)0.001 (3)0.055 (4)
C30.070 (4)0.138 (6)0.060 (3)−0.026 (4)0.006 (3)−0.037 (4)
C40.067 (5)0.068 (5)0.125 (8)0.0000.040 (5)0.000
Si1—Si22.3227 (11)Si6—Cl612.0202 (13)
Si1—Si2i2.3228 (11)C1—C21.3855 (18)
Si1—Si3i2.3246 (11)C1—C2iii1.3855 (18)
Si1—Si32.3247 (11)C1—H10.9500
Si2—Cl212.0138 (12)C2—C31.378 (3)
Si2—Cl232.0221 (12)C2—H20.9500
Si2—Cl222.0225 (12)C3—C41.3824 (18)
Si3—Cl332.0150 (13)C3—H30.9500
Si3—Cl312.0209 (13)C4—H40.9500
Si3—Cl322.0223 (13)C5—C61.382 (15)
Si4—Si52.3221 (11)C5—H50.9500
Si4—Si5ii2.3222 (11)C6—C71.375 (14)
Si4—Si62.3250 (11)C6—H60.9500
Si4—Si6ii2.3251 (11)C7—H70.9500
Si5—Cl512.0138 (12)C5'—C6'1.399 (15)
Si5—Cl532.0218 (12)C5'—H5'0.9501
Si5—Cl522.0243 (12)C6'—C7'1.376 (15)
Si6—Cl622.0158 (13)C6'—H6'0.9500
Si6—Cl632.0194 (13)C7'—H7'0.9500
Si2—Si1—Si2i107.85 (6)C2—C1—C2iii118.8 (7)
Si2—Si1—Si3i110.38 (3)C2—C1—H1120.6
Si2i—Si1—Si3i109.07 (3)C2iii—C1—H1120.6
Si2—Si1—Si3109.07 (3)C3—C2—C1119.9 (6)
Si2i—Si1—Si3110.37 (3)C3—C2—H2120.1
Si3i—Si1—Si3110.06 (7)C1—C2—H2120.1
Cl21—Si2—Cl23109.46 (5)C2—C3—C4122.6 (6)
Cl21—Si2—Cl22108.20 (6)C2—C3—H3118.7
Cl23—Si2—Cl22108.85 (6)C4—C3—H3118.7
Cl21—Si2—Si1110.71 (5)C3iii—C4—C3116.3 (7)
Cl23—Si2—Si1109.84 (5)C3iii—C4—H4121.9
Cl22—Si2—Si1109.75 (4)C3—C4—H4121.9
Cl33—Si3—Cl31109.11 (6)C6—C5—C5iv106.0 (6)
Cl33—Si3—Cl32109.50 (6)C6—C5—H5119.4
Cl31—Si3—Cl32109.58 (6)C5iv—C5—H5134.6
Cl33—Si3—Si1109.69 (5)C5—C6—C7120.0 (9)
Cl31—Si3—Si1109.31 (5)C5—C6—C7iv104.5 (8)
Cl32—Si3—Si1109.63 (5)C5—C6—H6120.0
Si5—Si4—Si5ii108.07 (6)C7—C6—H6120.0
Si5—Si4—Si6109.22 (3)C7iv—C6—H6135.5
Si5ii—Si4—Si6110.07 (3)C7iv—C7—C6133.9 (6)
Si5—Si4—Si6ii110.08 (3)C6—C7—C6iv103.4 (9)
Si5ii—Si4—Si6ii109.22 (3)C7iv—C7—H7105.9
Si6—Si4—Si6ii110.15 (7)C6—C7—H7120.2
Cl51—Si5—Cl53109.35 (5)C6iv—C7—H7136.4
Cl51—Si5—Cl52108.28 (6)C5'iv—C5'—C6'134.3 (6)
Cl53—Si5—Cl52109.28 (6)C5'iv—C5'—H5'105.1
Cl51—Si5—Si4110.45 (5)C6'—C5'—H5'120.6
Cl53—Si5—Si4109.95 (5)C6'iv—C5'—H5'136.3
Cl52—Si5—Si4109.50 (5)C7'—C6'—C5'121.1 (10)
Cl62—Si6—Cl63108.97 (6)C7'—C6'—H6'119.4
Cl62—Si6—Cl61109.56 (6)C5'—C6'—H6'119.4
Cl63—Si6—Cl61109.51 (6)C5'iv—C6'—H6'134.0
Cl62—Si6—Si4109.60 (5)C6'—C7'—C7'iv104.6 (7)
Cl63—Si6—Si4109.65 (5)C6'—C7'—H7'120.6
Cl61—Si6—Si4109.54 (5)C7'iv—C7'—H7'134.8
C2iii—C1—C2—C30.6 (4)C7iv—C6—C7—C6iv−1 (2)
C1—C2—C3—C4−1.2 (9)C5'iv—C5'—C6'—C7'0 (4)
C2—C3—C4—C3iii0.6 (4)C6'iv—C5'—C6'—C7'0.0 (10)
C5iv—C5—C6—C7−1.7 (13)C6'iv—C5'—C6'—C5'iv0 (3)
C5iv—C5—C6—C7iv−1.2 (10)C5'—C6'—C7'—C7'iv−0.1 (14)
C5—C6—C7—C7iv2 (3)C5'iv—C6'—C7'—C7'iv−0.2 (11)
C5—C6—C7—C6iv1.0 (9)
  1 in total

1.  Syntheses and Molecular Structures of Liquid Pyrophoric Hydridosilanes.

Authors:  Maik Gerwig; Uwe Böhme; Mike Friebel; Franziska Gründler; Georg Franze; Marco Rosenkranz; Horst Schmidt; Edwin Kroke
Journal:  ChemistryOpen       Date:  2020-07-27       Impact factor: 2.911

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