| Literature DB >> 32049489 |
Wei Fu1,2, Jingsi Qiao2, Xiaoxu Zhao3, Yu Chen4, Deyi Fu2, Wei Yu1, Kai Leng1, Peng Song1, Zhi Chen1, Ting Yu4, Stephen J Pennycook3, Su Ying Quek2,5, Kian Ping Loh1,2.
Abstract
The breaking of multiple symmetries by periodic lattice distortion at a commensurate charge density wave (CDW) state is expected to give rise to intriguing interesting properties. However, accessing the commensurate CDW state on bulk TaS2 crystals typically requires cryogenic temperatures (77 K), which precludes practical applications. Here, we found that heteroepitaxial growth of a 2H-tantalum disulfide bilayer on a hexagonal-boron nitride (h-BN) substrate produces a robust commensurate CDW order at room temperature, characterized by a Moiré superlattice of 3 × 3 TaS2 on a 4 × 4 h-BN unit cell. The CDW order is confirmed by scanning transmission electron microscopy and Raman measurements. Theoretical calculations reveal that the stabilizing energy for the CDW phase of the monolayer and bilayer 2H-TaS2-on-h-BN substrates arises primarily from interfacial electrostatic interactions and, to a lesser extent, interfacial strain. Our work shows that engineering interfacial electrostatic interactions in an ultrathin van der Waals heterostructure constitutes an effective way to enhance CDW order in two-dimensional materials.Entities:
Keywords: Moiré superlattice; charge density wave; interfacial electrostatic interaction; molecular beam epitaxy; two-dimensional transition metal dichalcogenides
Year: 2020 PMID: 32049489 DOI: 10.1021/acsnano.0c00303
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881