Literature DB >> 32048366

Electric-Field-Controlled Antiferromagnetic Spintronic Devices.

Han Yan1, Zexin Feng1, Peixin Qin1, Xiaorong Zhou1, Huixin Guo1, Xiaoning Wang1, Hongyu Chen1, Xin Zhang1, Haojiang Wu1, Chengbao Jiang1, Zhiqi Liu1.   

Abstract

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  antiferromagnetic spintronics; artificial neurons; electrostatic modulation; ionic modulation; piezoelectric strain

Year:  2020        PMID: 32048366     DOI: 10.1002/adma.201905603

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  1 in total

1.  Spin State Switching in Heptauthrene Nanostructure by Electric Field: Computational Study.

Authors:  Karol Szałowski
Journal:  Int J Mol Sci       Date:  2021-12-13       Impact factor: 5.923

  1 in total

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