| Literature DB >> 31971768 |
Yoan Bourlier1,2, Bruno Bérini1, Mathieu Frégnaux2, Arnaud Fouchet3, Damien Aureau2, Yves Dumont1.
Abstract
The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO3 onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO3. Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO3. The nanothick SrTiO3-transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or "oxitronics" onto any Si-based substrate.Entities:
Keywords: SrTiO3 pseudosubstrate; SrVO3; sacrificial layer; silicon; water soluble
Year: 2020 PMID: 31971768 DOI: 10.1021/acsami.9b21047
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229