Literature DB >> 31891921

Reliable anatase-titania nanoclusters functionalized GaN sensor devices for UV assisted NO2 gas-sensing in ppb level.

Md Ashfaque Hossain Khan1, Brian Thomson, Ratan Debnath, Asha Rani, Abhishek Motayed, Mulpuri V Rao.   

Abstract

Internet of Things applications require ultra-low power, integrable into electronic circuits and mini-sized chemical sensors for automated remote air quality monitoring system. In this work, a highly sensitive and selective detection of nitrogen dioxide (NO2) has been demonstrated by functionalizing gallium nitride (GaN) submicron wire with titania (TiO2) nanoclusters. The two-terminal GaN/TiO2 sensor device was fabricated by top-down approach. The photo-enabled sensing makes it possible to operate this sensor at room-temperature, resulting in a significant reduction in operating power. The GaN/TiO2 sensor was able to detect NO2 concentrations as low as 10 ppb in air at room temperature (20 °C) with a quick response-recovery process. The sensor was found highly selective toward NO2 against other interfering gases, such as ethanol (C2H5OH), ammonia (NH3), sulfur dioxide (SO2), methane (CH4) and carbon dioxide (CO2). Furthermore, principal component analysis has been performed to address the cross-sensitive nature of TiO2. The sensor device exhibited excellent long-term stability at room temperature and humidity and was quite stable and reliable at various environmental conditions. Continuous exposure of the device to siloxane for a one-month period has shown a very small degradation in sensor response to NO2. Finally, interaction of NO2 gas molecules with the GaN/TiO2 sensor has been modeled and explained under the light of energy band diagram. The photoinduced oxygen desorption and subsequent charge transfer between TiO2 nanoclusters and NO2 molecules modulate the depletion region width within the GaN, thus contributing to a high performance NO2 gas sensing.

Entities:  

Year:  2019        PMID: 31891921     DOI: 10.1088/1361-6528/ab6685

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  3 in total

1.  Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature.

Authors:  Md Ashfaque Hossain Khan; Ratan Debnath; Abhishek Motayed; Mulpuri V Rao
Journal:  Sensors (Basel)       Date:  2021-01-17       Impact factor: 3.576

2.  Adsorption performance of M-doped (M = Ti and Cr) gallium nitride nanosheets towards SO2 and NO2: a DFT-D calculation.

Authors:  Hossein Roohi; Nastaran Askari Ardehjani
Journal:  RSC Adv       Date:  2020-07-24       Impact factor: 4.036

Review 3.  Recent Progress in Gas Sensor Based on Nanomaterials.

Authors:  Danyang Lun; Ke Xu
Journal:  Micromachines (Basel)       Date:  2022-06-10       Impact factor: 3.523

  3 in total

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