Literature DB >> 31805542

Atomic, electronic and transport properties of In-Au 2D compound on Si(1 0 0).

D V Gruznev1, L V Bondarenko, A Y Tupchaya, V G Kotlyar, O A Utas, A N Mihalyuk, N V Denisov, A V Matetskiy, A V Zotov, A A Saranin.   

Abstract

Two-dimensional (In, Au)/Si(1 0 0)c(2 [Formula: see text] 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe resistivity measurements assisted with first-principles density-functional-theory calculations. The present results are compared to those obtained earlier for the parent (Tl, Au)/Si(1 0 0)c(2 [Formula: see text] 2) system.

Entities:  

Year:  2019        PMID: 31805542     DOI: 10.1088/1361-648X/ab5f28

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  1 in total

1.  Transport properties of MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions tuned by bias and gate voltages.

Authors:  Hong Yu; Danting Li; Yan Shang; Lei Pei; Guiling Zhang; Hong Yan; Long Wang
Journal:  RSC Adv       Date:  2022-06-13       Impact factor: 4.036

  1 in total

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