| Literature DB >> 31798360 |
Alessandro Greco1, Vladimir Starostin1, Christos Karapanagiotis2, Alexander Hinderhofer1, Alexander Gerlach1, Linus Pithan3, Sascha Liehr4, Frank Schreiber1, Stefan Kowarik4.
Abstract
X-ray reflectivity (XRR) is a powerful and popular scattering technique that can give valuable insight into the growth behavior of thin films. This study shows how a simple artificial neural network model can be used to determine the thickness, roughness and density of thin films of different organic semiconductors [diindenoperylene, copper(II) phthalocyanine and α-sexithiophene] on silica from their XRR data with millisecond computation time and with minimal user input or a priori knowledge. For a large experimental data set of 372 XRR curves, it is shown that a simple fully connected model can provide good results with a mean absolute percentage error of 8-18% when compared with the results obtained by a genetic least mean squares fit using the classical Parratt formalism. Furthermore, current drawbacks and prospects for improvement are discussed. © Alessandro Greco et al. 2019.Entities:
Keywords: X-ray reflectivity; machine learning; neural networks; organic semi-conductors
Year: 2019 PMID: 31798360 PMCID: PMC6878882 DOI: 10.1107/S1600576719013311
Source DB: PubMed Journal: J Appl Crystallogr ISSN: 0021-8898 Impact factor: 3.304
Figure 1Schematic of the neural network architecture used in this work. The input layer consists of 52 reflectivity values at discrete q positions. The output layer consists of four sample parameters: three film parameters (thickness, roughness and SLD) and one substrate parameter (thickness of the native silicon oxide). All layers are fully connected with the next by weights that are randomly initialized and then optimized.
Figure 2Characteristic training and validation errors during training of the neural network demonstrated in this study. Since the validation error is very close to the training error, there is not likely to be any overfitting with respect to the validation data.
Figure 3Fitting performance of the neural network model on a DIP film grown at 303 K with a deposition rate of 1 Å min−1. (a)–(c) Comparison of the film parameters determined by the neural network with results from LMS fitting with human supervision at different times during growth. The shaded area marks films with thicknesses below 20 Å, where the network has not been trained and consistently yields thick films with high roughness. (d) Overlay of the experimental XRR data with data simulated using the parameters determined by the NN at different times during growth.
Mean absolute percentage error and standard deviation of the NN output for experimental XRR curves with respect to the values obtained via a conventional LMS fit with manually set bounds and starting points
Films with a thickness below the training range of the NN (<20 Å) and high roughness (>30 Å) were excluded. DIP 303 K (1) is shown in Fig. 3 ▸; all others are shown in the supporting information.
| DIP 403 K | DIP 303 K (1) | DIP 303 K (2) | CuPc 303 K | 6T 303 K | Total | |
|---|---|---|---|---|---|---|
| Thickness (%) | 17 ± 20 | 4 ± 4 | 6 ± 9 | 16 ± 13 | 14 ± 3 | 11 ± 10 |
| Roughness (%) | 20 ± 14 | 12 ± 11 | 15 ± 11 | 26 ± 18 | 16 ± 11 | 18 ± 13 |
| SLD (%) | 11 ± 9 | 3 ± 2 | 9 ± 8 | 6 ± 5 | 10 ± 6 | 8 ± 6 |