Literature DB >> 31762265

Motion-Programmed Bar-Coating Method with Controlled Gap for High-Speed Scalable Preparation of Highly Crystalline Organic Semiconductor Thin Films.

Seon Baek Lee1, Boseok Kang1,2, Daegun Kim1, Chaneui Park1, Seulwoo Kim3, Minhwan Lee3, Won Bo Lee3, Kilwon Cho1.   

Abstract

Solution-processed organic semiconductor thin films with high charge carrier mobility are necessary for development of next-generation electronic applications, but the rapid processing speed demanded for the industrial-scale production of these thin films poses a challenge to control of their thin-film properties, such as crystallinity, morphology, and film-to-film uniformity. Here, we show a new solution coating method that is compatible with a roll-to-roll printing process at a rate of 2 mm s-1 by using a gap-controllable wire bar, motion-programming strategy, and blended active inks. We demonstrate that the coating bar, the horizontal motion of which is repeatedly brought to an intermittent standstill, results in an improved vertically self-stratified structure and a high crystallinity for organic active inks comprising a semiconducting small molecule and a semiconducting polymer. Furthermore, organic transistors prepared by the developed method show superior hole mobility with high operational stability (hysteresis and kink-free transfer characteristics), high uniformity over a large area of a 4 in. wafer, good reproducibility, and superior electromechanical stabilities on a flexible plastic substrate. The bar-coating approach demonstrated here will be a step toward developing industrial-scale practical organic electronics applications.

Keywords:  bar coating; charge transport; organic semiconductors; organic transistors; vertical phase separation

Year:  2019        PMID: 31762265     DOI: 10.1021/acsami.9b17044

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  2 in total

1.  Enhanced Performance of Cyclopentadithiophene-Based Donor-Acceptor-Type Semiconducting Copolymer Transistors Obtained by a Wire Bar-Coating Method.

Authors:  Doyeon Kim; Minho Yoon; Jiyoul Lee
Journal:  Polymers (Basel)       Date:  2021-12-21       Impact factor: 4.329

2.  Tailored Uniaxial Alignment of Nanowires Based on Off-Center Spin-Coating for Flexible and Transparent Field-Effect Transistors.

Authors:  Giwon Lee; Haena Kim; Seon Baek Lee; Daegun Kim; Eunho Lee; Seong Kyu Lee; Seung Goo Lee
Journal:  Nanomaterials (Basel)       Date:  2022-03-28       Impact factor: 5.076

  2 in total

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