| Literature DB >> 31697089 |
Jason F Khoury1, Alexander J E Rettie2,3, Mojammel A Khan2, Nirmal J Ghimire2,4, Iñigo Robredo5,6, Jonathan E Pfluger7, Koushik Pal7, Chris Wolverton7, Aitor Bergara5,6,8, J S Jiang2, Leslie M Schoop9, Maia G Vergniory5,10, J F Mitchell2, Duck Young Chung2, Mercouri G Kanatzidis1,2.
Abstract
Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the Γ-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.Entities:
Year: 2019 PMID: 31697089 DOI: 10.1021/jacs.9b10147
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419