| Literature DB >> 31689076 |
Peng Yu1,2, Ziyuan Li2, Tongwei Wu1, Yi-Tao Wang3, Xin Tong1, Chuan-Feng Li3, Zhongchang Wang4, Su-Huai Wei5, Yunyan Zhang6, Huiyun Liu6, Lan Fu2, Yanning Zhang1, Jiang Wu1, Hark Hoe Tan2, Chennupati Jagadish1,2, Zhiming M Wang1.
Abstract
Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.Entities:
Keywords: nanowire; photon antibunching; quantum dot; single photon source; surface engineering
Year: 2019 PMID： 31689076 DOI： 10.1021/acsnano.9b07204
Source DB: PubMed Journal: ACS Nano ISSN： 1936-0851 Impact factor: 15.881