Gallium indium phosphide microstructures with suppressed photoluminescence for applications in nonlinear optics.

Gallium indium phosphide (Ga0.51In0.49P), lattice matched to gallium arsenide, shows remarkable second-order nonlinear properties, as well as strong photoluminescence (PL) due to its direct band gap. By measuring the second-harmonic generation from the GaInP microwaveguide (0.2×11×1300  μm) before and after stimulating intrinsic photobleaching, we demonstrate that the PL could be strongly suppressed (-34  dB), leaving the nonlinear properties unchanged, making it suitable for low-noise applications.