| Literature DB >> 31638369 |
Ainur Zhussupbekova1, Aitkazy Kaisha1, Rajani K Vijayaraghavan2, Karsten Fleischer1,3, Igor V Shvets1, David Caffrey1.
Abstract
In this report, reactive and nonreactive sputtering of amorphous ZnSnOy (a-ZnSnOy) was investigated, and extensive composition maps have been measured by X-ray photoelectron spectroscopy. The comprehensive analysis of the ((ZnO)x(SnO2)1-x) composition reveals that the best Zn/Sn ratio for high conductivity of the material can vary depending on the deposition technique utilized. Best conductivities of 225 S/cm were found to occur at x = 0.32 for reactive sputtering of a Sn target and x = 0.27 for nonreactive sputtering of a SnO2 target. These values correspond to unstable polymorphs of a-ZnSnOy, ZnSn2O5, and ZnSn3O7. Distinct local bonding arrangements have been confirmed by Raman spectroscopy.Entities:
Keywords: Raman spectroscopy; X-ray photoelectron spectroscopy; amorphous oxide semiconductor; magnetron sputtering; transparent conducting oxide; zinc tin oxide
Year: 2019 PMID: 31638369 DOI: 10.1021/acsami.9b06210
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229