| Literature DB >> 31603641 |
Baoshan Cui1,2, Hao Wu1, Dong Li3, Seyed Armin Razavi1, Di Wu1, Kin L Wong1, Meixia Chang2, Meizhen Gao2, Yalu Zuo2, Li Xi2, Kang L Wang1.
Abstract
Current-induced spin-orbit torques (SOTs) enable efficient electrical manipulation of the magnetization in heterostructures with a perpendicular magnetic anisotropy through the Rashba effect or spin-Hall effect. However, in conventional SOT-based heterostructures, an in-plane bias magnetic field along the current direction is required for the deterministic switching. Here, we report that the field-free SOT switching can be achieved by introducing a wedged oxide interface between a heavy metal and a ferromagnet. The results demonstrate that the field-free SOT switching is determined by a current-induced perpendicular effective field (Hzeff) originating from the interfacial Rashba effect due to the lateral structural symmetry-breaking introduced by the wedged oxide layer. Furthermore, we show that the sign and magnitude of Hzeff exhibit a significant dependence on the interfacial oxygen content, which can be controlled by the inserted oxide thickness. Our findings provide a deeper insight into the field-free SOT switching by the interfacial Rashba effect.Entities:
Keywords: Rashba effect; field-free magnetization switching; interfacial decoration; interfacial oxygen content; perpendicular magnetic anisotropy; spin−orbit torque
Year: 2019 PMID: 31603641 DOI: 10.1021/acsami.9b13622
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229