Dipjyoti Das1, Peddaboodi Gopikrishna1, Debasish Barman2, Ramesh Babu Yathirajula1, Parameswar Krishnan Iyer3,4. 1. Center for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam, 781039, India. 2. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, Assam, 781039, India. 3. Center for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam, 781039, India. pki@iitg.ac.in. 4. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, Assam, 781039, India. pki@iitg.ac.in.
Abstract
White organic/polymer light emitting diode (WOLED/WPLED) processed from solution has attracted significant research interest in recent years due to their low device production cost, device flexibility, easy fabrication over large area including roll to roll and ability to print in various designs and shapes providing enormous design possibilities. Although WOLEDs fabricated using solution process lack their thermally evaporated counterparts in terms of device efficiency, remarkable progress has been made in this regard in recent years by utilizing new materials and device structures. In the present review, we have summarized and extrapolated an excellent association of old and modern concept of cost-effective materials and device structure for realization of white light. In particular, this article demonstrated and focused on design, and development of novel synthesis strategy, mechanistic insights and device engineering for solution process low cost WOLEDs device. Herein, an overview of the prevailing routes towards white light emitting devices (WLEDs) and corresponding materials used, including polymer based WLED, small molecules emitters based thermally activated delayed fluorescence (TADF), perovskite light-emitting diodes (PeLEDs) and hybrid materials based LEDs, color down-converting coatings with corresponding best efficiencies ever realized. We presume that this exhaustive review on WLEDs will offer a broad overview of the latest developments on white SSL and stonework the approach en route for innovations in the immediate future.
White organic/polymer light emitting diode (WOLED/WPLED) processed from solution has attracted significant research interest in recent years due to their low device production cost, device flexibility, easy fabrication over large area including roll to roll and ability to print in various designs and shapes providing enormous design possibilities. Although WOLEDs fabricated using solution process lack their thermally evaporated counterparts in terms of device efficiency, remarkable progress has been made in this regard in recent years by utilizing new materials and device structures. In the present review, we have summarized and extrapolated an excellent association of old and modern concept of cost-effective materials and device structure for realization of white light. In particular, this article demonstrated and focused on design, and development of novel synthesis strategy, mechanistic insights and device engineering for solution process low cost WOLEDs device. Herein, an overview of the prevailing routes towards white light emitting devices (WLEDs) and corresponding materials used, including polymer based WLED, small molecules emitters based thermally activated delayed fluorescence (TADF), perovskite light-emitting diodes (PeLEDs) and hybrid materials based LEDs, color down-converting coatings with corresponding best efficiencies ever realized. We presume that this exhaustive review on WLEDs will offer a broad overview of the latest developments on white SSL and stonework the approach en route for innovations in the immediate future.
As the world gets modernized, electronic devices have become an inevitable part of our daily lives and with increasing dependence of artificial intelligence and machine learning a life without electronic gadgets would be impossible to imagine. Our dependability on electronics has stretched to such an extent that our lifestyle, economic activity, heath as well as security rely and are impacted hugely by development in the electronic technology. As a result, there has been an ever-increasing demand of highly efficient, eco-friendly, flexible and low cost integrated optoelectronic devices and the resources and methodologies used to manufacture such devices has become a subject of extreme importance. Considering the unique and easy to tune chemical and optical properties, flexibility and stretchablity of the organic materials, which cannot be afforded by the conventional materials in use, these organic electronic devices are being viewed as the future of electronics, thereby expanding the functionality and accessibility of electronics [1-3]. Organic electronic devices have the potential to be more energy efficient and eco-friendly, can be processed and manufactured using more resource friendly and cost-effective processes, and most importantly can be flexible and stretchable unfolding vast design possibilities. The prime focus of the researchers working in the field of organic electronics is mainly on displays and lighting, transistors and solar cells, healthcare and biomedical devices, both in terms of designing novel materials as well as device architectures. In recent years significant research interest has been devoted towards various organic optoelectronic devices such as OLEDs, OSCs, OFETs and organic memories etc [4-8]. Especially, OLEDs that can emit white light, is considered to be the next generation lighting source due to the limitations of the traditional incandescent bulbs in terms of device efficiency, the non-eco-friendly nature of the fluorescence tubes and the restriction in the fabrication of large area light source by using inorganic semiconductors [9-12]. However, in order to become the next generation lighting source by replacing the traditional lighting elements, WOLEDs should be able to demonstrate higher efficiency maintaining a reduced production cost. Unfortunately, most of the highly efficient WOLEDs have been fabricated via thermal deposition technique at high vacuum level giving rise to noteworthy challenges towards manufacturing low cost large area devices. The lookouts for new processing techniques are hence increasing in order to make large area electronics available for general applications at a reduced cost. In that regard, solution based device processing procedures, viz. spin-coating, ink-jet printing etc. offer numerous advantages over the existing manufacturing process such as vacuum deposition. Apart from low cost, solution processed OLEDs also hold an edge over other techniques since it allows printing in various designs and shapes and provides enormous design possibilities. Due to their ability to form high quality thin films through solution processing technique, polymer materials have often been the preferred material while fabricating solution processed OLEDs. Polymer based WOLEDs (WPLEDs) can be easily fabricated using the aforementioned solution processed techniques reducing the production cost significantly. From materials point of view, the relatively easy color tuning property of the π-conjugated polymers as well as the easy to control doping process leads to the availability of a large variety of materials to be used as the active material for WPLEDs. Apart from utilization of polymers as the emitting layer and host materials, significant research effort has also been devoted to design and develop solution processed small molecule based white light materials. Another important aspect towards the realization of high-performance white light is the utilization of triplet excitons in the radiative recombination process. Materials containing heavy atoms such as Ir, Pt etc. have the capability to induce spin orbit coupling thereby allowing the radiative decay of triplet excitons. Although WOLEDs based on such materials exhibits higher efficiency, they are not cost effective. Recently, Adachi and co-workers pioneered a 100% excitons utilization strategy in OLEDs via TADF emitters exploiting purely organic materials, which, under thermal activation, could harvest both 25% as well as 75% of singlet triplet excitons respectively via reverse intersystem crossing (RISC) from their lowest triplet excited state (T1) to the lowest singlet excited state (S1), facilitated by the narrow energy gap between S1 and T1 [13]. These TADF based emitters are therefore capable of demonstrating 100% IQE with an EL efficiency on par with that of the Ph-OLED. Moreover, tremendous work has been done recently to generate WLED by adopting TADF emitters, due to their higher triplet in energy and high full width at half maxima (FWHM), that enables to transfer full energy either to counter the green and red fluorescent emitter or by complementary yellow emitter [14, 15]. To suppress the carrier recombination in the device, TADF emitters are being explored as assistant dopant and host, through Förster resonance energy transfer (FRET) or exciplex formation mechanism. Remarkably, low cost solution processed TADF-WOLEDs have been fabricated by strategically employing single and multi-layer TADF emissive layer, realizing very low turn on voltages (V), high power efficiencies (PE (lm/W)), current efficiencies (CE (cd/A)) even maximum of 28% external quantum efficiencies (ηEQE) with Commission Internationale de L’Eclairage (CIE) co-ordinate near to standard (0.33, 0.33) extending towards a promising lighting technology for future generation WOLEDs. Recently, perovskite-based materials have emerged as probable contenders for high performance devices. Perovskite materials play a vital role in the field of optoelectronics and photovoltaics, due to their high crystallinity, higher mobilities, good film forming properties, carrier longer life times as well as higher quantum yields. The beauty of perovskite materials is that, by performing simple band gap tuning and adding additives like long chain cations, amines, bromides, one can tune the color of light as well as improve the device parameters to be able to be used in multiple applications. Perovskite metal halides have already been utilized to demonstrate excellent efficiency in solar cells and significant amount of research have now been dedicated towards their utilization in LED devices by exploring different means of tuning their optoelectronic and luminescence properties. This has led to a plethora of highly photoluminescent new materials (including solution processed), covering the entire visible range, associated with remarkable improvement in device performances.Overall, WOLEDs have the potential to fulfil the future demands such as energy saving, foldable, high color quality, high brightness and most importantly large area display and solid-state lighting devices. Although, there are still challenges to be overcome, advanced WOLED systems can also be useful to develop stretchable and transparent displays. The present commercialized WOLED products are manufactured by thermal deposition techniques, which is more expensive. Therefore, there is enough scope of research to develop highly efficient WOLEDs by solution process technique by proper designing of novel materials and device architectures.Some of the major issues, solution processed WOLEDs are facing is long-term device stability and chemical modification (in case of perovskite materials). The device stability mainly depends on the active material. It is well-known that the organic materials are more stable as compared to perovskite materials. Hence, these problems can be solved by chemical or physical doping of organic materials into the perovskite materials. Another important issue is the color stability of the WOLEDs. It is quite difficult to obtain pure white light from the device over a wide voltage range. This problem can be solved by focusing on single white light emitting materials.In this review, a systematic description has been provided regarding the working of an OLED, approaches to generate white light, important characterization parameters and finally solution processed WOLEDs fabricated using π-conjugated materials, especially the polymers have been discussed and reviewed, to be inclusive of literature in the best possible manner. Special emphasis has also been given to highlight the recent development of high performance TADF WOLEDs by employing some π-conjugated unique small molecules with specific device engineering strategy to produce white emission. Lastly but not the least, the recent developments in the emerging area of PeLEDs, both for material synthesis and device architecture, and towards their realization of white light has also been discussed. We expect this review to be helpful for the reader in providing them an overview of the past and present state towards the development of cost-effective materials and novel device architecture of white organic light emitting diode using solution processing technique and possible direction to overcome the existing challenges for developing futuristic solid state lighting (SSL) materials and devices.
Basics of OLED and characterization parameters
As the name suggests, in an OLED, light is generated in an organic semiconductor layer known as emissive layer. In an OLED, usually one or more organic thin films is traditionally sandwiched as an intermediate layer with two distinct electrodes at top and bottom where one electrode is usually transparent in order for light to escape from the device. Upon electrical excitation, electrons get injected from the cathode side while the holes are injected from the anode. As they meet and recombine at the EML, they give light as output. The color of the light generated by the OLEDs is often determined by the property of the emissive materials. The role of the others layers used in the OLED structure is mainly to provide efficient carrier injection as well as confining them in the EML to achieve more recombination and higher efficiency. The performance of a WPLED is usually judged by both device efficiency and color quality. In case of efficiency, three different terms have been used widely viz. luminous efficiency, quantum efficiency and power efficiency. Among the three parameters, the first two are material dependent and therefore important for material evaluation while the third one can be related to the device architecture and is therefore crucial in device characterization and fabrication improvements. Luminous efficiency (LE) is regularly mentioned as candela per ampere (cd/A) and measure the luminous intensity (in candela, cd), or luminance (L, in candela per meter square cd/m2) validated by a device at any current density (J). Quantum efficiency (QE) of a device is actually a measure of the photons formed from the injected hole and electron pairs in the LED. Among them, the photons emitted outside the LED are associated with the external quantum efficiency (EQE) and the photons generated inside the LED are responsible for internal quantum efficiency (IQE). Power efficiency (PE) is characterized as lumen per watt (lm/W) and defined as luminous flux output (in lumen) per input power of this device. The color quality of the generated white light is judged by its CIE coordinates, color rendering index (CRI) and color correlated temperature (CCT). CIE coordinates is a way to define any color in terms of (x,y) coordinates and is used to accurately represent every single color that a human eye can perceive. For e.g. the CIE coordinate of pure white light is (0.33, 0.33). CRI is used to measure the quality of a colored light as compared to that of the natural sunlight. It is usually measured in a scale of 0–100 and the CRI value of natural sunlight is assumed to be 100. CRI of a light source indicates how closely it can illuminate an object as compared to that of natural sunlight and replicate its true colors. It is therefore an important parameter to judge the quality of an artificial light source. In order to be used for indoor applications, a light source should possess high CRI value typically greater than 80. CCT of a light source is defined as the temperature of an ideal black body radiator radiating same light as that of the light source. It is usually used to define the color appearance of a WOLED. In general light with a CCT value of 2700 K or less, 4000 K and 5000 K or more is considered as warm light, neutral light and cool light respectively.
Methods for generating white electroluminescence
To be utilized as a preferred white light source, the output spectral range of an OLED must span the complete visible range (400–800 nm) and their spectral distribution range must match with real sun light. The dominating approach to achieve this, in general, is to carefully combine the electroluminescent materials, typically two or three, emitting within the complementary range of visible spectrum. In evaporated OLEDs, this can be achieved by the fabrication of multilayer devices where each layer emits a specific color. However, in case of solution processed WOLEDs, white light is basically generated by single layer of a white-emitting copolymer where the emission of several colors takes place in a single layer. In this regard, several approaches such as doping green and red or orange emitting small molecules into a blue emitting polymeric host, polymer–polymer blending, electroplex, single white emitting polymer synthesized by incorporating green and red or orange moiety within the main/side alkyl chains of the blue light emitting conjugated polymer etc. has been the common strategy. Solution processed WOLEDs can also be fabricated using multilayer device structure, however, fabrication of multilayer polymer LEDs is more cumbersome as multilayer devices are difficult to process from solution and there is always a possibility that the solvent used in solution processing may destroy the layer beneath it. Fortunately, all these issues can be solved by proper selection of materials and solvents.In case of TADF based OLEDs, tremendous effort has been devoted to generate white light by adopting TADF emitters, since they have higher triplet energy and high full width at half maximum (FWHM), enabling to transfer full energy either to counter green and red fluorescent emitter or by complementary yellow emitter. To suppress the carrier recombination in the device TADF emitters are being explored as assistant dopant and host, through FRET or exciplex formation mechanism. Remarkably, low cost solution processed TADF-WOLEDs fabricated by strategically employing single and multi-layer TADF emissive layer were found to demonstrate very low turn on voltages (V), high power efficiencies (PE (lm/W)), high current efficiencies (CE (cd/A)) and a maximum of 28% external quantum efficiencies (ηEQE) with Commission Internationale de L’Eclairage (CIE) co-ordinate near to standard (0.33, 0.33), extending its application towards a promising lighting technology for future generation WOLEDs.
WOLEDs based on blending approach and exciplex formation
Blending small molecules or polymers emitting in the complementary region within 400 to 800 nm range is considered to be the simplest approach to fabricate white light emitting PLEDs. In this approach, a blue polymer material is usually used as a host material which is doped with green and orange/red light emitting small molecule or polymer to generate white light. Although this approach provides certain advantages such as easy control of the dopant concentration, easy synthesis process etc., it has drawbacks with respect to phase separation of the different dopants, complicated energy transfer as well as deep trapping processes during device operation leading to voltage dependent electroluminescence spectra.A series of WOLEDs were fabricated by Kim et al. in 2004, by physical mixing of two fluorene derivatives as green (FFBFF) and red (FTBTF) emitting molecules into modified PFO copolymer (PFTPA-OXD). To obtain efficient charge balanced blue emitting PFO host the triphenyl amine moiety as hole and oxadiazole moiety as electron transporting materials were introduced into PFO main chain (Fig. 1). The ratios of the green and red emitting molecules were carefully controlled to achieve white emission. The WOLEDs in the architecture ITO/PEDOT:PSS/active layer/Ca/Ag were developed and these devices displayed highest brightness and EQE of 0.82% and 12,900 cd/m2, at 12 V [16]. CIE coordinates of these white light device was (0.36, 0.37) at 6 V to (0.34, 0.34) at 12 V.
Fig. 1
Molecular structures of the PF-TPA-OXD, FFBFF and FFTBTFF
Molecular structures of the PF-TPA-OXD, FFBFF and FFTBTFFWOLEDs were achieved by doping orange emitting rubrene into two different spiropolyfluorene derivatives such as spiro-diEHPF and triphenyl amine substituted spiro-polyfluorene (spiro-TPA50-diEHPF). White emitting and yellow emitting OLEDs were fabricated by 0.3% of rubrene into spiro-diEHPF and spiro-TPA50-diEHPF, respectively. These devices displayed a maximum brightness and luminous efficiencies of 56,000 cd/m2 and 9 cd/A for WLED and 72,000 cd/m2 and 14 cd/A for yellow LED. As shown in Fig. 2, the rubrene-doped spirodiEHPF based device displayed voltage independent EL spectra [17].
Fig. 2
Chemical structures of rubrene and polymers. EL spectra of a rubrene-doped spirodiEHP (0.35 wt%) and b spiro-TPA50-diEHP devices. The insets in a and b EL spectra of rubrene-doped devices (0.5 wt%)
Molecular structures of PFONPN01 and DBT. a EL spectra and b CIE coordinate diagram of devices (B4-PFONPN01, W1, W2, and W3 with DBT ratio of 0.2%, 0.4% and 0.6%, respectively)
a EL spectra of m-LPPP (solid line) and the PL spectra of PPDB in solid state (dashed line) and solution form (circles). b EL spectra of the WPLED at different applied voltage
a Schematic energy band diagram of the WPLED. b External efficiency and power efficiency for the PLEDs with different doping ratio as functions of current density and c normalized EL spectra of MEH-PVV: PFO (0.25 wt%) PLED at different applied voltages (3 to 7 V)
a Structures of polymers. b Energy level diagram of the WPLEDs [in BEL-PVK: solid line, poly-TPD: dashed line, and BE-co-MEH-PPV: dotted line; in TEL-PFO: solid line and PFT: dashed line]
a The EL spectra and b the CIE co-ordinates diagram of the undoped PVK based PLEDs with or without different ETLs (DEV B-without ETL, DEV B-BCP, DEV B-Bphen and DEV B-TPBi)
White emission can be generated from single polymer systems by chemically connecting/mixing of primary (Blue, Green and Red) or complementary (Blue and Orange) color emitting molecules, which are more beneficial than the previously existing methods. These molecular structures can provide easy solution processing for large area device fabrication and overcome the phase separation issue, which is more important to produce the stable pure white emission. These copolymers were mainly designed based on a dopant and host strategy, that required a small dopant quantity to be introduced into main chain or attached covalently to the host polymer side chain. The most challenging entity is that the mol% of dopant materials has to be appropriately maintained while introducing them into the host polymer backbone. It is noteworthy to mention that the very widely used polymer host is polyfluorene (PF), because of its high solid-state fluorescence quantum yield (0.55%) and good solution processing ability. The white emission can be realized through the partial FRET from wide band gap host molecule to low band gap dopant molecule. Numerous, WPLEDs have been reported so far, and among all, some of them are being discussed here based on their stable white emission and device performance.The first single polymer system has been designed and synthesized by Lee et al. in 2005, which consisted of primary color emitting materials (copolymer structures displayed in Fig. 10). The copolymer with feed ratio of 95(B):3(G):2(R) exhibited white emission and it displayed highest brightness of 820 cd/m2 and CIE coordinate values of (0.33, 0.35) at 11 V [29]. In the same year Liu et al. achieved white light emission from the single polymer system. The copolymers were synthesized by incorporating very small amounts of green dopant (0.0002 mol%) on the side chain and red dopant (0.0003 mol%) into the polyfluorene main chain. The WPLEDs were fabricated having configuration ITO/PEDOT:PSS/WPF-G2R3/Ca/Al (Table 1) [30]. In the pure single layer WPLEDs developed by Tu et al. in 2006, the copolymers were synthesized by inserting of 1,8-naphthalimide derivatives as orange dopants into the PFO backbone (P3) and the chemical structures are shown in Fig. 10. White emission was realized by adjusting of chemical feed ratios of the 1,8-naphthalimides in the PFO backbone. The single layer WPLEDs were fabricated having configuration ITO/PEDOT (50 nm)/polymer (80 nm)/Ca (10 nm)/Al (100 nm) (Table 1). Among the three polymers, triphenyl amine substituted copolymer exhibited very close to white light and additionally exhibiting highly stable EL spectra even on varying the driving voltages (Fig. 11) [31].
Fig. 10
Chemical structures of the single layer copolymers
Table 1
EL performance of the single layer copolymers
Material
Device configuration
Vturn-on [V]
LE [cd/A]
EQE
Luminance [cd/m2]
CIE (x,y)
Refs.
P1
ITO/PEDOT:PSS/PG3R2/Ca/Al
6.0
0.10
–
820
0.33, 0.35
[29]
P2
ITO/PEDOT:PSS/WPF-G2R3/Ca/Al
5.8
1.59
–
3786
0.31, 0.34
[30]
P3
ITO/PEDOT/P3/Ca/Al
6.6
3.8
1.50
11,900
0.32, 0.36
[31]
P4
ITO/PEDOT:PSS/WPF-BT-3/Ca/Al
5.4
7.30
–
12,300
0.35, 0.32
[32]
P5
ITO/PEDOT:PSS/WPFB-BT-3/Ca/Al
6.6
2.53
–
3585
0.37, 0.34
P6
ITO/PEDOT/WP-P1/Ca/Al)
3.5
10.66
–
21,240
0.30, 0.40
[33]
P7
ITO/PEDOT/WRGB-P1/Ca/Al
4.0
7.30
–
12,710
0.31, 0.32
[34]
P8
ITO/PEDOT/WRGB-P2/Ca/Al
4.0
3.80
–
12,870
0.30, 0.31
P9
ITO/PEDOT/WP-B5O3/Ca/Al
3.5
12.8
–
18,480
0.31, 0.36
[35]
P10
ITO/PEDOT/WP-O3/Ca/Al
3.5
9.3
–
15,390
0.34, 0.34
P11
ITO/PEDOT:PSS/WP -B5G2R5/Ca/Al
3.5
8.6
–
11,510
0.33, 0.36
[36]
P12
ITO/PEDOT/PVK/PFO-R005-G010/Ba/Al
8.88
2.97
–
472.77
0.32, 0.34
[37]
P13
ITO/PEDOT/WPFTO-II/TPBI/Mg:Ag
5.5
4.87
2.22
5000
0.37, 0.36
[38]
P14
ITO/PEDOT:PSS/PFPCVB 025/Balq/LiF/Al
–
0.34
0.41
860
0.30, 0.36
[39]
P15
ITO/PEDOT:PSS/PFPCVB 50/Balq/LiF/Al
–
0.97
0.90
1750
0.33, 0.39
P16
ITO/PEDOT:PSS/P1/Ba/Al
–
22.62
–
–
0.30, 0.42
[40]
P17
ITO/PEDOT:PSS/FF-0.25/Al
4.1
5.17
3.10
9106
0.30, 0.31
[41]
P18
ITO/PEDOT:PSS/P(FCPA-0.5)/Al
–
4.6
–
5862
0.30, 0.33
[42]
P19
ITO/PEDOT:PSS/P(FCPA-1)/Al
–
4.5
–
6184
0.31, 0.32
P20
ITO/PEDOT:PSS/FCP 2.5/Al
3.9
6.34
–
9332
0.33, 0.34
[43]
P21
ITO/PEDOT:PSS/FBPAN 0.5/Al
1.4
7.8
–
13,455
0.32, 0.31
[44]
P22
ITO/PEDOT:PSS/WDP-1/TPBi/LiF/Al
4.47
7.82
–
9753
0.31, 0.33
[45]
P23
ITO/PEDOT:PSS/WDT-1/TPBi/LiF/Al
4.14
4.57
–
7436
0.35, 0.34
Fig. 11
a EL spectra of the WPLEDs and b EL spectra of P3-0.5 at different driving voltages
Chemical structures of AIEE active copolymersRecently, Iyer and co-workers designed and synthesized novel white electroluminescent copolymers by chemical incorporation of AIEE active mono-substituted dibenzofulevene (M-DBF) derivatives as orange/red emitting units into the PFO main chain (Fig. 14). The incomplete energy transfer has been easily obtained by controlling the mol% (0.0003% for the both WDP-1 and WDT-1 copolymers) of the AIEE orange/red luminogens in wide band gap blue emitting PFO back bone. Single layer WPLEDs having the architecture ITO/PEDOT:PSS/active layer/TPBi/LiF/Al have been fabricated and the data presented in Table 1. Importantly, when an enhanced voltage from 8 to 14 V was applied, exceedingly stable EL spectra of the copolymers WDP-1 and WDT-1 was obtained, which is very important for real world applications (Fig. 14) [45].
Fig. 14
EL spectra of WDP-1 (a) and WDT-1 (b) copolymers based WPLEDs at different driving voltages
Förster resonance energy transfer (FRET) and exciplex TADF-WOLEDs
Adachi and co-workers pioneered a TADF-assisted fluorescence OLED (TAF-OLED) strategy by appropriate mixing of TADF with fluorescent molecules enabling promising operating stability and ηint of ~ 100% [46]. Especially, to achieve white light emission, a blue TADF molecule bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMACDPS), acts as a common triplet harvester that has been employed with multiple traditional green and red 9,10-bis[N,N-di-(p-tolyl)-amino]anthracene (TTPA) and tetraphenyldibenzoperiflanthene (DBP) fluorophores respectively. Blue TADF emitter DMACDPS has higher triplet energy, and considered as exciton donor whereas fluorophores TTPA and DBP are exciton acceptors. Further, for realizing white light emission, a spatial separation was made by introducing 2 nm thick mCP layer to suppress major carrier recombination between TADF emitter and fluorophores. Interestingly, a long range FRET mechanism has been investigated where up-converted singlet exciton transfer energy to fluorescent emitter (shown in Fig. 15a, b).
Fig. 15
a Chemical structures of emissive materials, b FRET mechanism between DMACDPS and TTPA (green) and DBP (red) under electrical excitation [spacer layer mCP (2 nm)], c current density and luminance vs. voltage spectra and d external EL quantum efficiency vs. current density spectra of the OLEDs
ITO/TAPC/TCTA/CBP:PTZ-TTR or PTZ-Ph-TTR/TmPyPb/LiF/Al
3.2, 3.45
(0.33, 0.33)
(0.41, 0.47)
2.68, 16.34
300, 10,000
4.93, 41.75
[52]
DDCzTrz
ITO/MoO3/TAPC/DDCzTrz/TmPyPB/LiF/Al
3.0
(0.34, 0.35)
28.4
18 796
68.5
[53]
EL performances of different TADF materialsDMACDPSTTPADBPNI-1-PhTPAPXZDSO2DBPCz-4CzPNCz-4CzTPNAnbCzCDBP:PO-T2To,oʹ-NPh2TXO-PhCz4(0.33, 0.33)(0.41, 0.47)Li et al. reported a device structure by adjusting chromaticity tuneable concept exploiting TADF material PXZDSO2 in the device to achieve pure white OLEDs [47]. A white light emission has been realized by utilizing conventional deep-blue-fluorescence emitter NI-1-PhTPA, which comprises a blue emission from singlet excitons, while the triplet excitons give rise to transfer the energy into a longer wavelength PXZDSO2 TADF emitter. Furthermore, to accumulate the singlet excitons of PXZDSO2, a conventionally used deep-red-fluorescence emitter DBP was appropriately incorporated in the device to realize full visible region spectra and high CRI value.Moreover, a series of white light emitting devices were developed by manipulating the excitons of singlet and triplet states using a sole yellow TADF emitter. Among all these devices W3 and W4 exhibited pure white light by employing two color pure organic emitter, devices results EQE of 15.8% and 19.2% with CIE coordinates (0.382, 0.448) and (0.322, 0.408) respectively, where two-color pure organic molecules inserted. Three color WOLEDs also made by adding DBP red emitter and a 15.6% EQE and 95 CRI value with CIE coordinate (0.332, 0.371) accomplished by a candle-style warm light OLED (Fig. 16).
Fig. 16
a Chemical structure of NI-1-PhTPA, PXZDSO2 and DBP, b EQE vs. luminance spectra and c EL spectra of the OLEDs W1, W2, W3, and Y1
a Chemical structures of emitter dopants and hosts. b Energy transfer mechanism of the TADF emitters with exciplex host (solid arrow indicates FRET and broken line arrow indicates DET). EL spectra of the devices at varying luminance c devices W-1, d W-2, and e W-3, f current density (J–V) vs. luminance characteristics, g PE-luminance and h EQE vs. luminance plots of the three fabricated F-WOLEDs
a Chemical structures of emitter dopants and hosts. b Energy transfer mechanism of the TADF emitters with exciplex host (solid arrow indicates FRET and broken line arrow indicates DET). EL spectra of the devices at varying luminance c devices W-1, d W-2, and e W-3, f current density (J–V) vs. luminance characteristics, g PE-luminance and h EQE vs. luminance plots of the three fabricated F-WOLEDsA F-WOLED device was constructed having the structure: ITO/TAPC (40 nm)/TCTA (10 nm)/CDBP:PO-T2T: 7.5 wt% 2CzPN: 0.6 wt% AnbCz (30 nm)/TmPyPB (45 nm)/LiF (1 nm)/Al (100 nm) without additional charge transporting materials. A simplified electroluminescent device exhibited highly efficient white emission, with rather conventional host having maximum EQE, PE, current efficiency (CE) of 19.0%, 63.0 lm/W, 50.1 cd/A at much lower turn-on voltages reported among F-WOLEDs.
Multi-layer TADF-WOLEDs
Any high performance WOLEDs comprises of a high FWHM and large spectral overlap among multi-component emitters. Wang and co-workers demonstrated a simple bi-component WOLED by adopting blue emitting TADF material, 20-(dimesitylboranyl)-N,N-diphenyl-[1,10-biphenyl]-2-amine (o,o′-NPh2), and yellow emitting TADF molecule 4-phenyl-40-carbazole-9-H-thioxanthen-9-one-10,10-dioxide (TXOPhCz4) as dopant (as shown in Fig. 19a) [50]. TXOPhCz4 dispersed in o,o′-NPh2 formed a bi-component EML for WLEDs (Fig. 19). The device architecture had ITO/HAT-CN (5 nm)/TAPC (30 nm)/mCP (15 nm)/x wt% TXOPhCz4:o,o′-NPh2 (20 nm)/TmPyPB (50 nm)/LiF (0.9 nm)/Al (90 nm), dopant concentration varied from 0.5 to 5.0 wt% and an optimized device holds best results among all bi-component WOLEDs with 12.5% maximum EQE, 30.2 cd/A current efficiency, and 27.1 lm/W power efficiency with (0.38, 0.40) CIE coordinates and CRI value of 77 at 9 V (Table 2).
Fig. 19
a Molecular structures of the emitters. The EL characteristics of WOLEDs fabricated with different dopant concentrations of TXO-PhCz4, b current density–voltage–luminance curves, c current efficiency and power efficiency versus luminance curves, d EQE-luminance curves, e EL spectra of all devices at 9 V
a Molecular structures of the emitters. The EL characteristics of WOLEDs fabricated with different dopant concentrations of TXO-PhCz4, b current density–voltage–luminance curves, c current efficiency and power efficiency versus luminance curves, d EQE-luminance curves, e EL spectra of all devices at 9 VWang and co-workers established an edge-spiro strategy to develop an efficient blue TADF host, SFI34mTz for all-TADF WOLEDs (type IV), by considering the issue of interaction-induced quenching between adjacent TADF molecules and fluorescence molecules, and manifested previously explored F-WOLEDs (Type 1, II, and III) (shown in Fig. 20) [51]. A series of spiro[fluorene-indenocarbazole] (SFI)-based SFInxTz (n = 23 and 34; x = m and p), have been synthesized, SFI23mTz (5′-(3-(4,6-diphenyl-1,3 5-triazin-2-yl)phenyl)-5′H-spiro[fluorene-9,7′-indeno[2,1-b] carbazole]), SFI23pTz (5′-(4-(4,6-diphenyl-1,3,5-triazin-2-yl) phenyl)-5′H-spiro[fluorene-9,7′-indeno[2,1-b]carbazole]), SFI34mTz (5′-(3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-5′Hspiro[fluorene-9,12′-indeno[1,2-c]carbazole]), and SFI34pTz (5′-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-5′H-spiro[fluorene-9,12′-indeno[1,2-c]carbazole]), these blue TADF dyes are ornamented with different spiro-fluorene groups to achieve a low ∆EST and high PLQY, ΦPL due to a strong steric hindrance and good electronic distribution within the molecule. However, among all the designed emitters SFI34pTz realized a true blue electroluminescence with 25.3% of maximum EQE with CIE coordinates (0.15, 0.20), revealing a potential host material to suppress intermolecular interaction. Furthermore, 2,7-bis(4-(diphenylamino) phenyl)-9H-thioxanthen-9-one 10,10-dioxide (DTPATXO), a new yellow TADF dye, has been used as dopant to configure a white TADF device with the architecture shown in Table 2. Significantly, the fabricated WOLED accompanied a turn on voltage as low as 3.6 V, with nearly unchanged CIE coordinates of (0.32 ± 0.01, 0.42 ± 0.02) at an enhanced luminance of 500 to 3000 cd/m2, CCT in the range of 4962–6038 K. These WOLEDs resulted in EQE values of 22.9%, current efficiency of 58.0 cd/A and power efficiency 52.4 lm/W.
Fig. 20
a Strategies for white light generation from the device. GS, ES, and ET, ground state, excited state and energy transfer respectively. b DTPATXO a yellow TADF structure, c luminance and J–V and EL spectra (inset) of the devices, d luminance efficiency curves of the devices
WOLEDs based on multi-EML or multi-dopant single-EML device architecture has certain complication with high device cost and reproducibility. Therefore, development of single layer white light emitting materials is a long time demand in high performances WOLED technology. Zhang and co-workers presented the concept of using two specific TADF emitters 2-(10H-phenothiazin-10-yl) thianthrene 5,5,10,10-tetraoxide (PTZ-TTR) and 2-(4-(10H-phenothiazin-10-yl)phenyl)thianthrene 5,5,10,10-tetraoxide (PTZ-Ph-TTR) and studied them with two previously described emitters 2-(9,9-dimethylacridin-10(9H)-yl)thianthrene 5,5,10,10-tetraoxide (DMACTTR) and 2-(4-(9,9-dimethylacridin-10(9H)-yl)phenyl)-thianthrene 5,5,10,10-tetraoxide (DMAC-Ph-TTR) [52]. These TADF emitters exhibited tunable planar and orthogonal dual stable conformations with two different emission and 100% excitons utilization realized (Fig. 21).
Fig. 21
a Molecular structures of the emitters and strategical relationships. b PEluminance-EQE curves. c J–V and luminescence curves and normalized EL spectra of d PTZ-TTR (inset: CIE variations from 100 to 1000 cd/m2) and e PTZ-Ph-TTR (inset: CIE variations at different voltage)
a Device configuration, b molecular structures of TAPC, TmPyPB, and DDCzTrz, c EQE and PE of W1. Inset: EL spectra at various luminances and an image of the WOLED, d current density and luminance of W1
The field of optoelectronics is recently witnessing the emergence of perovskite materials for various dynamic applications [54-56]. Record efficiency of 22.1% has been reported in the photovoltaics using these materials. The main reason for such high efficiency is the development of smooth films which are crystalline and defect-free. Moreover, such films can be formed using solution-processing technique. Another set of advantages that these materials possess are highly crystallinity, outstanding charge transport, easy way of grain size control, and surface trap density reduction by passivation with efficient carrier charge recombination which is the main requisite for application in white LEDs [57, 58]. Also, enhanced PLQY of with average values ca. 90% and 40% have been achieved in nanoparticles and thin films respectively [59-65]. Furthermore, the FWHM as narrow as 20 nm have also been reported and can be easily tunable covering the entire visible range [66]. A general perovskite structure that has general molecular formula ABX3 is shown in Fig. 23 where ‘A’ is an organic cation (i.e. CH3NH3+, CH3CH2NH3+), ‘B’ is metal cation (i.e. Pb2+, Sn2+) and ‘X’ is halogen anion (i.e. F−, Cl−, Br−, I−) [67].
Perovskite crystals at a ambient temperature and b UV light, c absorbance spectra and emission spectra of the bulk and micro-scaled perovskite crystals at room temperature, d TRPL study bulk and micro-scaled perovskite crystals, e CIE color coordinates of the white perovskites
(Reproduced with permission from Ref. [68] Copyright 2017, Nature Publishing Group)
Perovskite crystals at a ambient temperature and b UV light, c absorbance spectra and emission spectra of the bulk and micro-scaled perovskite crystals at room temperature, d TRPL study bulk and micro-scaled perovskite crystals, e CIE color coordinates of the white perovskites(Reproduced with permission from Ref. [68] Copyright 2017, Nature Publishing Group)Yet the most important concern remains the fabrication of stable and efficient devices emitting pure white light using perovskite materials. Numerous scientific and research groups have initiated the core reason behind this and the focus has now shifted to designing interlayers for increasing the stability by improving the interfaces. As of now, blue LEDs have also been accomplished using all-inorganic perovskite using perovskites. In 2015, this was demonstrated using CsPbX3 (X = Cl, Br, I) quantum dots (QDs) and these QDs were utilized in devices bearing architecture of ITO/PEDOT:PSS/PVK/QDs/TPBi/LiF/Al. Hot-injection method was used in the synthesis of QDs and their size and halide composition helped tuning of the luminescence wavelength. A luminance of 742 cd/m2 and an EQE of 0.07% were the output of the blue devices.By using the device architecture ITO/NiOx/CsPbBrxCl3−x/TPBi/LiF:Al, the output parameters like brightness 350 cd/m2 and the current efficiency 0.18 cd/A has also been achieved. Apart from the blue light emitting diode (LED), the authors have also established a white LED with an active layer comprising a blend of orange emitting conjugated polymer i.e., poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH:PPV) and CsPbBrxCl3−x QDs, using a similar device architecture (ITO/NiOx/CsPbBrxCl3−x:MEH:PPV/TPBi/LiF:Al). Nickel oxide (NiOx) provides an enhanced thermal and chemical stability compared to PEDOT:PSS and it was used as a hole transporting layer also. TPBi is used as an electron transport/hole blocking layer since it has a strong hole blocking property compared with BPhen or BCP (Fig. 25). The white light emitting device had CIE coordinates of (0.33, 0.34) and a maximum brightness of ca. 100 cd/m2 for an applied voltage of 7 V [69].
Fig. 25
a White perovskite LED energy diagram, b EL spectra of MEH: PPV/perovskite active layer for different weight ratio, c the variation of the CIE color coordinates upon varying the weight ratio [inset: image of a working white PeLED], d the current density–luminance–voltage curve of white PeLEDs
a PL spectra, b color triangle and the CIE color coordinates of the WLED device, c power efficiency vs. current density spectrum of the WLED. d PL spectra of the WLED measured at different time
In the present review, an excellent association of old and modern concept of cost-effective materials and device structure for white lighting technology applications has been summarized and extrapolated. In particular, this article demonstrated and focused on design, and development of novel synthesis strategy, mechanistic insights and device engineering for solution processed low cost WOLEDs device. By tuning chromaticity adjustable emissive molecular structural unit either by intramolecular, intermolecular fashion in single layer or by multilayer structural perturbations, doping with foreign additives in emissive layer, high performance device efficiencies can be achieved. Herein, an overview of the existing routes towards white lighting devices and corresponding materials used, including polymer white light emitting diode (PWLED), small molecules based thermally activated delayed fluorescence (TADF), emitters, perovskite materials based thin film light-emitting diodes (PeLEDs) and hybrid LEDs (HLEDs), color down-converting coatings with corresponding best efficiencies ever realized have also been summarized. Overall, it is expected that this review will deliver information on the wide-ranging development in this area and provide an overview of the current state in the field of white SSL encompassing various materials and device architecture choices, provide directions for new innovations in many of these aspects as this research topic matures over the next few years to an all-purpose lighting and display technology for the future applications.