| Literature DB >> 31512304 |
Guillaume Schweicher1, Gabriele D'Avino2, Michael T Ruggiero3,4, David J Harkin1, Katharina Broch1, Deepak Venkateshvaran1, Guoming Liu1, Audrey Richard5, Christian Ruzié5, Jeff Armstrong6, Alan R Kennedy7, Kenneth Shankland8, Kazuo Takimiya9, Yves H Geerts5, J Axel Zeitler3, Simone Fratini2, Henning Sirringhaus1.
Abstract
Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested.Entities:
Keywords: charge transport; dynamic disorder; field-effect transistors; molecular design; organic electronics; transient localization scenario
Year: 2019 PMID: 31512304 DOI: 10.1002/adma.201902407
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849