| Literature DB >> 31458996 |
Peter C Sherrell1, Kanudha Sharda1, Chiara Grotta1, Jacopo Ranalli1, Maria S Sokolikova1, Federico M Pesci1, Pawel Palczynski1, Victoria L Bemmer1, Cecilia Mattevi1.
Abstract
Monolayer TiS2 is the lightest member of the transition metal dichalcogenide family with promising applications in energy storage and conversion systems. The use of TiS2 has been limited by the lack of rapid characterization of layer numbers via Raman spectroscopy and its easy oxidation in wet environment. Here, we demonstrate the layer-number-dependent Raman modes for TiS2. 1T TiS2 presents two characteristics of the Raman active modes, A1g (out-of-plane) and Eg (in-plane). We identified a characteristic peak frequency shift of the Eg mode with the layer number and an unexplored Raman mode at 372 cm-1 whose intensity changes relative to the A1g mode with the thickness of the TiS2 sheets. These two characteristic features of Raman spectra allow the determination of layer numbers between 1 and 5 in exfoliated TiS2. Further, we develop a method to produce oxidation-resistant inks of micron-sized mono- and few-layered TiS2 nanosheets at concentrations up to 1 mg/mL. These TiS2 inks can be deposited to form thin films with controllable thickness and nanosheet density over square centimeter areas. This opens up pathways for a wider utilization of exfoliated TiS2 toward a range of applications.Entities:
Year: 2018 PMID: 31458996 PMCID: PMC6645014 DOI: 10.1021/acsomega.8b00766
Source DB: PubMed Journal: ACS Omega ISSN: 2470-1343
Figure 1Photograph of (a) colloidal suspension of exfoliated TiS2 nanosheets in water; (b) TiS2 thin film deposited via dip-coating on a glass; (c) individualized 2 nm thick TiS2 nanosheet (scale bar = 500 nm) (inset: cross-sectional height profile); (d) histogram of the TiS2 layer number as determined by OM contrast analysis and the thickness is calibrated using WiTEC AFM for a given optical contrast—Figure S1; and (e) TiS2 nanosheet lateral size separated by a number of layers as determined by OM (distribution is the percentage of flakes of a given layer number that falls within the lateral size regime).
Figure 2(a) Unit cell and crystal structure of 1T-TiS2 (space group: P3̅m1) and TEM analysis of a TiS2 nanosheet exfoliated in water; (b) TEM image (highlighted area = SAED region); (c) electron diffraction pattern; and (d) atomic lattice in a high-resolution TEM image.
Figure 3Raman spectroscopy of TiS2 nanosheets deposited on SiO2 (285 nm)/Si substrates via dip-coating (flake thickness determined via WiTEC-AFM): (a) spectra with intensity normalized to the A1g peak and attained for different layer numbers using a 532 nm excitation laser (including a representation of A1g and Eg vibrational modes), dashed line highlighting the minor change in Eg position with layer numbers; (b) spectra with intensity normalized to the A1g peak and attained for different layer numbers using a 633 nm excitation laser; and (c) peak intensity ratio between the A1g vibrational mode and the shoulder peak plotted as a function of layer numbers.
Figure 4UV–vis absorption spectra of (a) exfoliated TiS2 nanosheets in deoxygenated water over 5 days and (b) 20 nm thick films of TiS2 nanosheets (from water exfoliation) recorded after deposition (“as deposited”), 5 days, and 180 days; (i) UV–vis spectra recorded over 24 h (1 cycle per 5 min) for a water suspension of TiS2 immediately post exfoliation; and (ii) Raman spectra of a TiS2 flake as a thin film over 800 min showing enhanced stability of TiS2 on substrates.
Figure 5Lithium-based exfoliation of bulk TiS2 in nanosheets stabilized via solvent exchange: (a) UV–vis absorption spectrum of TiS2 nanosheets in 1-methyl-2-pyrollidone (NMP) as-prepared, after 14 days, and after 500 days; (b) photograph of aliquots of TiS2 nanosheets stabilized in NMP as-produced and after 500 days; TEM image of TiS2 stabilized via solvent exchange (c) as-produced and (d) after 500 days; and high-magnification imaging of (e) as-produced and (f) after 500 days (insets: SAED pattern).