| Literature DB >> 31448585 |
Haining Liu1,2, Menghua Cui1,2, Chunhe Dang1,2, Wen Wen1,2, Xinsheng Wang1, Liming Xie1,2.
Abstract
Two-dimensional (2D) materials, with atomic thickness and unique electronic structure, hold great potentials in electronic device applications. Charge transfer at the interface of 2D materials further provides a versatile platform for applications in electronics. Here, we report nonvolatile memory devices based on interface charge trapping between 2D WSe2 and organic electron acceptors. The 2D WSe2-organic acceptor hybrid structure exhibits a high storage performance, such as large gate memory windows, high on/off ratios (>103), and long retention time (>1000 s). Further analysis revealed that organic acceptors with a stronger electron affinity (i.e., higher redox potential) have a larger electron-trapping ability and hence a better memory performance.Keywords: WSe; electron acceptor; interface charge transfer; nonvolatile memory; two-dimensional material
Year: 2019 PMID: 31448585 DOI: 10.1021/acsami.9b11998
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229