| Literature DB >> 31442021 |
Joshua Hall1, Niels Ehlen1, Jan Berges2, Erik van Loon2, Camiel van Efferen1, Clifford Murray1, Malte Rösner3, Jun Li1, Boris V Senkovskiy1, Martin Hell1, Matthias Rolf1, Tristan Heider4, María C Asensio5, José Avila5, Lukasz Plucinski4, Tim Wehling2, Alexander Grüneis1, Thomas Michely1.
Abstract
For quasi-freestanding 2H-TaS2 in monolayer thickness grown by in situ molecular beam epitaxy on graphene on Ir(111), we find unambiguous evidence for a charge density wave close to a 3 × 3 periodicity. Using scanning tunneling spectroscopy, we determine the magnitude of the partial charge density wave gap. Angle-resolved photoemission spectroscopy, complemented by scanning tunneling spectroscopy for the unoccupied states, makes a tight-binding fit for the band structure of the TaS2 monolayer possible. As hybridization with substrate bands is absent, the fit yields a precise value for the doping of the TaS2 layer. Additional Li doping shifts the charge density wave to a 2 × 2 periodicity. Unexpectedly, the bilayer of TaS2 also displays a disordered 2 × 2 charge density wave. Calculations of the phonon dispersions based on a combination of density-functional theory, density-functional perturbation theory, and many-body perturbation theory enable us to provide phase diagrams for the TaS2 charge density wave as functions of doping, hybridization, and interlayer potentials, and offer insight into how they affect lattice dynamics and stability. Our theoretical considerations are consistent with the experimental work presented and shed light on previous experimental and theoretical investigations of related systems.Entities:
Keywords: TaS2; charge density wave; doping; hybridization; layer dependence; monolayer; transition metal dichalcogenides
Year: 2019 PMID: 31442021 DOI: 10.1021/acsnano.9b03419
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881