| Literature DB >> 31434213 |
Ahmed Talaat1,2, Valentina Zhukova3,4, Mihail Ipatov3,4, Juan María Blanco4, Julián Gonzalez3, Arcady Zhukov3,4,5.
Abstract
The domain wall (DW) dynamics of amorphous and nanocrystalline Co-based glass-coated microwires are explored under the influence of stress annealing. Different annealing profiles have enabled remarkable changes in coercivity and magnetostriction values of Co-based amorphous microwires with initially negative magnitude, allowing induced magnetic bistability in stress-annealed samples and, consequently, high DW velocity has been observed. Similarly, Co-based nanocrystalline microwires with positive magnetostriction and spontaneous bistability have featured high DW velocity. Different values of tensile stresses applied during annealing have resulted in a redistribution of magnetoelastic anisotropy showing a decreasing trend in both DW velocities and coercivity of nanocrystalline samples. Observed results are discussed in terms of the stress dependence on magnetostriction and microstructural relaxation.Entities:
Keywords: domain wall dynamics; magnetostriction; nanocrystalline microwires; stress annealing
Year: 2019 PMID: 31434213 PMCID: PMC6720439 DOI: 10.3390/ma12162644
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1SEM image of a Co38.5Fe38.5B18Mo4Cu1 microwire (a) and optical microscope images in the transmitted light mode showing sample diameters for the (b) Co69.2Fe4.1B11.8Si13.8C1.1 and (c) Co38.5Fe38.5B18Mo4Cu1 microwires. The yellow arrows are for guidance.
Figure 2XRD patterns of as-prepared Co69.2Fe4.1B11.8Si13.8C1.1 and Co38.5Fe38.5B18Mo4Cu1 glass-coated microwires.
Figure 3Hysteresis loop of as-prepared Co69.2Fe4.1B11.8Si13.8C1.1 microwires.
Figure 4Evaluation of the coercivity and magnetostriction coefficient of stress-annealed Co69.2Fe4.1B11.8Si13.8C1.1 microwires versus annealing time at a fixed annealing temperature of 300 °C with an 80-MPa applied stress (a), and hysteresis loops of stress-annealed samples for 20 and 30 min (b).
Figure 5Domain wall velocity and calculated mobility for stress-annealed Co69.2Fe4.1B11.8Si13.8C1.1 microwires performed at a fixed annealing temperature of Tann = 300 °C under 80 MPa for tann = 20 and 30 min.
Figure 6Hysteresis loops of as-prepared Co38.5Fe38.5B18Mo4Cu1 microwires (a), and coercivity dependence on applied stresses of stress-annealed Co38.5Fe38.5B18Mo4Cu1 microwires at an annealing temperature of 300 °C for 1 h (b).
Figure 7Domain wall velocity of as-prepared and stress-annealed Co38.5Fe38.5B18Mo4Cu1 microwires at 300 °C for 1 h under different values of applied stresses.