| Literature DB >> 31338961 |
Fengkai Guo1, Bo Cui1, Huiyuan Geng1, Yang Zhang2, Haijun Wu2, Qian Zhang3, Bo Yu4, Stephen J Pennycook2, Wei Cai1, Jiehe Sui1.
Abstract
Significantly enhanced thermoelectric performance is achieved for eco-friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of ≈29 µW cm-1 K-2 at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu2 Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of ≈1.55 at 873 K.Entities:
Keywords: SnTe; interstitials; resonant levels
Year: 2019 PMID: 31338961 DOI: 10.1002/smll.201902493
Source DB: PubMed Journal: Small ISSN: 1613-6810 Impact factor: 13.281