| Literature DB >> 31320672 |
M A de Ponte1, Alan C Santos2.
Abstract
In this article, we present a quantum transistor model based on a network of coupled quantum oscillators destined to quantum information processing tasks in linear optics. To this end, we show in an analytical way how a set of N quantum oscillators (data-bus) can be used as an optical quantum switch, in which the energy gap of the data bus oscillators plays the role of an adjustable "potential barrier". This enables us to "block or allow" the quantum information to flow from the source to the drain. In addition, we discuss how this device can be useful for implementing single qubit phase-shift quantum gates with high fidelity, so that it can be used as a useful tool. To conclude, during the study of the performance of our device when considering the interaction of this with a thermal reservoir, we highlight the important role played by the set of oscillators which constitute the data-bus in reducing the unwanted effects of the thermal reservoir. This is achieved by reducing the information exchange time (shortening time scale) between the desired oscillators. In particular, we have identified a non-trivial criterion in which the ideal size of the data-bus can be obtained so that it presents the best possible performance. We believe that our study can be perfectly adapted to a large number of thermal reservoir models.Entities:
Year: 2019 PMID: 31320672 PMCID: PMC6639392 DOI: 10.1038/s41598-019-46902-5
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Left: Schematic representation of our quantum device, where the source and drain quantum oscillators are indirectly linked through a data bus. The data bus is constituted of N quantum oscillators, in which κ of them are at resonance with the source and drain (with frequency ω), meanwhile N − κ are far from resonance (with frequency ). Right: Scheme showing how the quantum gate (for the case of κ = 1) works, where the spacing between energy levels of the gate oscillator plays an important role for the performance of our transistor.
Figure 2Density plot for according to two sets of dimensionless parameters: (top) as a function of the ratio between the emission rate γ with the coupling strength λ and the temperature of the thermal baths through the ratio kT/hν, and (bottom) as a function of γ/λ and the number κ of resonant data-bus oscillators for different values of kT/hν. Note that the optimality criteria of , concerning the parameter κ, becomes evident with the highlight for the line that divides the densities regions larger and smaller than 0.9 in the graphs with kT/hν = 2 · 10−1, kT/hν = 5 · 10−1 and kT/hν = 1 · 100.