Literature DB >> 31298855

WO3-WS2 Vertical Bilayer Heterostructures with High Photoluminescence Quantum Yield.

Biyuan Zheng1,2, Weihao Zheng2, Ying Jiang2, Shula Chen1, Dong Li1, Chao Ma1, Xiaoxia Wang2, Wei Huang2, Xuehong Zhang2, Huawei Liu2, Feng Jiang2, Lihui Li2, Xiujuan Zhuang2, Xiao Wang2, Anlian Pan1,2.   

Abstract

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attractive for applications in a wide range of optoelectronic devices, due to their tremendous interesting physical properties. However, the photoluminescence quantum yield (PLQY) of TMDCs has been found to be too low, due to abundant defects and strong many-body effect. Here, we present a direct physical vapor growth of WO3-WS2 bilayer heterostructures, with WO3 monolayer domains attached on the surface of large-size WS2 monolayers. Optical characterizations revealed that the PLQY of the as-grown WO3-WS2 heterostructures can reach up to 11.6%, which is 2 orders of magnitude higher than that of WS2 monolayers by the physical vapor deposition growth method (PVD-WS2) and about 13-times higher than that of mechanical exfoliated WS2 (ME-WS2) monolayers, representing the highest PLQY reported for direct growth TMDCs materials so far. The PL enhancement mechanism has been well investigated by time-resolved optical measurements. The fabrication of WO3-WS2 heterostructures with ultrahigh PLQY provides an efficient approach for the development of highly efficient 2D integrated photonic applications.

Entities:  

Year:  2019        PMID: 31298855     DOI: 10.1021/jacs.9b03453

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  3 in total

1.  Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping against Tungsten Vacancy Formation.

Authors:  Hongquan Zhao; Guoxing Zhang; Bing Yan; Bo Ning; Chunxiang Wang; Yang Zhao; Xuan Shi
Journal:  Research (Wash D C)       Date:  2022-07-04

2.  CuFe2O4/MoS2 Mixed-Dimensional Heterostructures with Improved Gas Sensing Response.

Authors:  Kenan Zhang; Changchun Ding; Yihong She; Zhen Wu; Changhui Zhao; Baojun Pan; Lijie Zhang; Wei Zhou; Qunchao Fan
Journal:  Nanoscale Res Lett       Date:  2020-02-03       Impact factor: 4.703

Review 3.  Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides.

Authors:  Qun Wang; Run Shi; Yaxuan Zhao; Runqing Huang; Zixu Wang; Abbas Amini; Chun Cheng
Journal:  Nanoscale Adv       Date:  2021-05-05
  3 in total

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