Literature DB >> 31287705

Strongly Compressed Few-Layered SnSe2 Films Grown on a SrTiO3 Substrate: The Coexistence of Charge Ordering and Enhanced Interfacial Superconductivity.

Zhibin Shao1, Zhen-Guo Fu2, Shaojian Li1, Yan Cao1, Qi Bian1, Haigen Sun1, Zongyuan Zhang1, Habakubaho Gedeon1, Xin Zhang1, Lijun Liu1, Zhengwang Cheng1, Fawei Zheng2, Ping Zhang2, Minghu Pan1.   

Abstract

High pressure has been demonstrated to be a powerful approach of producing novel condensed-matter states, particularly in tuning the superconducting transition temperature (Tc) of the superconductivity in a clean fashion without involving the complexity of chemical doping. However, the challenge of high-pressure experiment hinders further in-depth research for underlying mechanisms. Here, we have successfully synthesized continuous layer-controllable SnSe2 films on SrTiO3 substrate using molecular beam epitaxy. By means of scanning tunneling microscopy/spectroscopy (STM/S) and Raman spectroscopy, we found that the strong compressive strain is intrinsically built in few-layers films, with a largest equivalent pressure up to 23 GPa in the monolayer. Upon this, unusual 2 × 2 charge ordering is induced at the occupied states in the monolayer, accompanied by prominent decrease in the density of states (DOS) near the Fermi energy (EF), resembling the gap states of CDW reported in transition metal dichalcogenide (TMD) materials. Subsequently, the coexistence of charge ordering and the interfacial superconductivity is observed in bilayer films as a result of releasing the compressive strain. In conjunction with spatially resolved spectroscopic study and first-principles calculation, we find that the enhanced interfacial superconductivity with an estimated Tc of 8.3 K is observed only in the 1 × 1 region. Such superconductivity can be ascribed to a combined effect of interfacial charge transfer and compressive strain, which leads to a considerable downshift of the conduction band minimum and an increase in the DOS at EF. Our results provide an attractive platform for further in-depth investigation of compression-induced charge ordering (monolayer) and the interplay between charge ordering and superconductivity (bilayer). Meanwhile, it has opened up a pathway to prepare strongly compressed two-dimensional materials by growing onto a SrTiO3 substrate, which is promising to induce superconductivity with a higher Tc.

Entities:  

Keywords:  SnSe/SrTiO; charge ordering; compressive strain; enhanced interface superconductivity; molecular beam epitaxy; scanning tunneling microscopy/spectroscopy

Year:  2019        PMID: 31287705     DOI: 10.1021/acs.nanolett.9b01766

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  2 in total

1.  Charge Redistribution Mechanisms in SnSe2 Surfaces Exposed to Oxidative and Humid Environments and Their Related Influence on Chemical Sensing.

Authors:  Gianluca D'Olimpio; Francesca Genuzio; Tevfik Onur Menteş; Valentina Paolucci; Chia-Nung Kuo; Amjad Al Taleb; Chin Shan Lue; Piero Torelli; Daniel Farías; Andrea Locatelli; Danil W Boukhvalov; Carlo Cantalini; Antonio Politano
Journal:  J Phys Chem Lett       Date:  2020-10-09       Impact factor: 6.475

Review 2.  Tin Diselenide (SnSe2) Van der Waals Semiconductor: Surface Chemical Reactivity, Ambient Stability, Chemical and Optical Sensors.

Authors:  Gianluca D'Olimpio; Daniel Farias; Chia-Nung Kuo; Luca Ottaviano; Chin Shan Lue; Danil W Boukhvalov; Antonio Politano
Journal:  Materials (Basel)       Date:  2022-02-02       Impact factor: 3.623

  2 in total

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