| Literature DB >> 31283882 |
Jinlong Zhu1, Yanan Liu2, Xin Yu1, Renjie Zhou1,3, Jian-Ming Jin2, Lynford L Goddard1.
Abstract
Using light as a probe to investigate perturbations with deep subwavelength dimensions in large-scale wafers is challenging because of the diffraction limit and the weak Rayleigh scattering. In this Letter, we report on a nondestructive noninterference far-field imaging method, which is built upon electrodynamic principles (mechanical work and force) of the light-matter interaction, rather than the intrinsic properties of light. We demonstrate sensing of nanoscale perturbations with sub-10 nm features in semiconductor nanopatterns. This framework is implemented using a visible-light bright-field microscope with a broadband source and a through-focus scanning apparatus. This work creates a new paradigm for exploring light-matter interactions at the nanoscale using microscopy that can potentially be extended to many other problems, for example, bioimaging, material analysis, and nanometrology.Keywords: Nanoscale sensing; defect inspection; electrodynamics; nanotechnology; optical microscopy; semiconductors
Year: 2019 PMID: 31283882 DOI: 10.1021/acs.nanolett.9b01806
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189