Literature DB >> 31134408

Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition.

Hongyan Xu1, Feng Han1, Chengkai Xia1, Siyan Wang1, Ranjith K Ramachandran2, Christophe Detavernier2, Minsong Wei3, Liwei Lin3, Serge Zhuiykov4,5.   

Abstract

Please be advised that the name of one of the coauthors in the original article [1] has been incorrectly spelled: 'Ranish M. Ramachandran' should be 'Ranjith K. Ramachandran'.

Entities:  

Year:  2019        PMID： 31134408      PMCID： PMC6536561          DOI： 10.1186/s11671-019-3028-5

Source DB:  PubMed          Journal:  Nanoscale Res Lett        ISSN： 1556-276X            Impact factor:   4.703


Correction to: Nanoscale Res Lett https://doi.org/10.1186/s11671-019-2991-1 Please be advised that the name of one of the coauthors in the original article [1] has been incorrectly spelled: ‘Ranish M. Ramachandran’ should be ‘Ranjith K. Ramachandran’. The authors apologize for this error.
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1.  Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition.

Authors:  Hongyan Xu; Feng Han; Chengkai Xia; Siyan Wang; Ranjith K Ramachandran; Christophe Detavernier; Minsong Wei; Liwei Lin; Serge Zhuiykov
Journal:  Nanoscale Res Lett       Date:  2019-05-14       Impact factor: 4.703
  1 in total

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