Literature DB >> 31116897

Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits.

Hocheon Yoo1, Sungmin On1, Seon Baek Lee2, Kilwon Cho2, Jae-Joon Kim1.   

Abstract

Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H-TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage (VOUT ) does not fully swing from VDD to GND . A new H-TR device structure that consists of a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) layer stacked on a PTCDI-C13 layer is presented. Due to the continuous DNTT layer from source to drain, the proposed device exhibits novel switching behavior: p-type off/p-type subthreshold region /NTC/ p-type on. As a result, it has a very high on/off current ratio (≈105 ) and exhibits NTC behavior. It is also demonstrated that an array of 36 of these H-TRs have 100% yield, a uniform on/off current ratio, and uniform NTC characteristics. Furthermore, the proposed ternary inverter exhibits full VDD -to-GND swing of VOUT with three distinct logic states. The proposed transistors and inverters exhibit hysteresis-free operation due to the use of a hydrophobic gate dielectric and encapsulating layers. Based on this, the transient operation of a ternary inverter circuit is demonstrated for the first time.
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  anti-ambipolar transistor; heterojunction; organic semiconductors; ternary inverter

Year:  2019        PMID: 31116897     DOI: 10.1002/adma.201808265

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  3 in total

Review 1.  Zinc-Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials.

Authors:  Juhyung Seo; Hocheon Yoo
Journal:  Membranes (Basel)       Date:  2022-04-29

2.  Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors.

Authors:  Junhwan Choi; Changhyeon Lee; Chungryeol Lee; Hongkeun Park; Seung Min Lee; Chang-Hyun Kim; Hocheon Yoo; Sung Gap Im
Journal:  Nat Commun       Date:  2022-04-28       Impact factor: 17.694

Review 3.  Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation.

Authors:  Gunhoo Woo; Hocheon Yoo; Taesung Kim
Journal:  Membranes (Basel)       Date:  2021-11-26
  3 in total

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