| Literature DB >> 31099075 |
Mengsha Li1, Chunhua Tang1, Tula R Paudel2, Dongsheng Song3, Weiming Lü4,5, Kun Han3, Zhen Huang3, Shengwei Zeng3, Xiao Renshaw Wang6, Ping Yang7, Jingsheng Chen1, Thirumalai Venkatesan3, Evgeny Y Tsymbal2, Changjian Li1, Stephen John Pennycook1,3.
Abstract
Interface-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking are of importance for fundamental physics and device applications. How interfaces affect the interplay between charge, spin, orbital, and lattice degrees of freedom is the key to boosting device performance. In LaMnO3 /SrTiO3 (LMO/STO) polar-nonpolar heterostructures, electronic reconstruction leads to an antiferromagnetic to ferromagnetic transition, making them viable for spin filter applications. The interfacial electronic structure plays a critical role in the understanding of the microscopic origins of the observed magnetic phase transition, from antiferromagnetic at 5 unit cells (ucs) of LMO or below to ferromagnetic at 6 ucs or above, yet such a study is missing. Here, an atomic scale understanding of LMO/STO ambipolar ferromagnetism is offered by quantifying the interface charge distribution and performing first-principles density functional theory (DFT) calculations across this abrupt magnetic transition. It is found that the electronic reconstruction is confined within the first 3 ucs of LMO from the interface, and more importantly, it is robust against oxygen nonstoichiometry. When restoring stoichiometry, an enhanced ferromagnetic insulating state in LMO films with a thickness as thin as 2 nm (5 uc) is achieved, making LMO readily applicable as barriers in spin filters.Entities:
Keywords: STEM-EELS; electronic reconstruction; ferromagnetic insulators; stoichiometry
Year: 2019 PMID: 31099075 DOI: 10.1002/adma.201901386
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849