Literature DB >> 31086337

Fidelity benchmarks for two-qubit gates in silicon.

W Huang1, C H Yang2, K W Chan2, T Tanttu2, B Hensen2, R C C Leon2, M A Fogarty2,3, J C C Hwang2, F E Hudson2, K M Itoh4, A Morello2, A Laucht2, A S Dzurak5.   

Abstract

Universal quantum computation will require qubit technology based on a scalable platform1, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations2,3. Although various qubit systems have shown high fidelities at the one-qubit level4-10, the only solid-state qubits manufactured using standard lithographic techniques that have demonstrated two-qubit fidelities near the fault-tolerance threshold6 have been in superconductor systems. Silicon-based quantum dot qubits are also amenable to large-scale fabrication and can achieve high single-qubit gate fidelities (exceeding 99.9 per cent) using isotopically enriched silicon11,12. Two-qubit gates have now been demonstrated in a number of systems13-15, but as yet an accurate assessment of their fidelities using Clifford-based randomized benchmarking, which uses sequences of randomly chosen gates to measure the error, has not been achieved. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80 to 89 per cent, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7 per cent and an average controlled-rotation fidelity of 98 per cent. These fidelities are found to be limited by the relatively long gate times used here compared with the decoherence times of the qubits. Silicon qubit designs employing fast gate operations with high Rabi frequencies16,17, together with advanced pulsing techniques18, should therefore enable much higher fidelities in the near future.

Entities:  

Year:  2019        PMID: 31086337     DOI: 10.1038/s41586-019-1197-0

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  24 in total

1.  The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots.

Authors:  Shimpei Nishiyama; Kimihiko Kato; Mizuki Kobayashi; Raisei Mizokuchi; Takahiro Mori; Tetsuo Kodera
Journal:  Sci Rep       Date:  2022-06-21       Impact factor: 4.996

2.  Coherent spin-state transfer via Heisenberg exchange.

Authors:  Yadav P Kandel; Haifeng Qiao; Saeed Fallahi; Geoffrey C Gardner; Michael J Manfra; John M Nichol
Journal:  Nature       Date:  2019-09-25       Impact factor: 69.504

3.  A four-qubit germanium quantum processor.

Authors:  Nico W Hendrickx; William I L Lawrie; Maximilian Russ; Floor van Riggelen; Sander L de Snoo; Raymond N Schouten; Amir Sammak; Giordano Scappucci; Menno Veldhorst
Journal:  Nature       Date:  2021-03-24       Impact factor: 69.504

4.  Fast universal quantum gate above the fault-tolerance threshold in silicon.

Authors:  Akito Noiri; Kenta Takeda; Takashi Nakajima; Takashi Kobayashi; Amir Sammak; Giordano Scappucci; Seigo Tarucha
Journal:  Nature       Date:  2022-01-19       Impact factor: 69.504

5.  Precision tomography of a three-qubit donor quantum processor in silicon.

Authors:  Mateusz T Mądzik; Serwan Asaad; Akram Youssry; Benjamin Joecker; Kenneth M Rudinger; Erik Nielsen; Kevin C Young; Timothy J Proctor; Andrew D Baczewski; Arne Laucht; Vivien Schmitt; Fay E Hudson; Kohei M Itoh; Alexander M Jakob; Brett C Johnson; David N Jamieson; Andrew S Dzurak; Christopher Ferrie; Robin Blume-Kohout; Andrea Morello
Journal:  Nature       Date:  2022-01-19       Impact factor: 69.504

6.  A Mechanically Tunable Quantum Dot in a Graphene Break Junction.

Authors:  Sabina Caneva; Matthijs Hermans; Martin Lee; Amador García-Fuente; Kenji Watanabe; Takashi Taniguchi; Cees Dekker; Jaime Ferrer; Herre S J van der Zant; Pascal Gehring
Journal:  Nano Lett       Date:  2020-06-24       Impact factor: 11.189

7.  Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon.

Authors:  A Crippa; R Ezzouch; A Aprá; A Amisse; R Laviéville; L Hutin; B Bertrand; M Vinet; M Urdampilleta; T Meunier; M Sanquer; X Jehl; R Maurand; S De Franceschi
Journal:  Nat Commun       Date:  2019-07-03       Impact factor: 14.919

8.  Coherent spin qubit transport in silicon.

Authors:  J Yoneda; W Huang; M Feng; C H Yang; K W Chan; T Tanttu; W Gilbert; R C C Leon; F E Hudson; K M Itoh; A Morello; S D Bartlett; A Laucht; A Saraiva; A S Dzurak
Journal:  Nat Commun       Date:  2021-07-05       Impact factor: 14.919

9.  Conditional teleportation of quantum-dot spin states.

Authors:  Haifeng Qiao; Yadav P Kandel; Sreenath K Manikandan; Andrew N Jordan; Saeed Fallahi; Geoffrey C Gardner; Michael J Manfra; John M Nichol
Journal:  Nat Commun       Date:  2020-06-15       Impact factor: 14.919

10.  Single-spin qubits in isotopically enriched silicon at low magnetic field.

Authors:  R Zhao; T Tanttu; K Y Tan; B Hensen; K W Chan; J C C Hwang; R C C Leon; C H Yang; W Gilbert; F E Hudson; K M Itoh; A A Kiselev; T D Ladd; A Morello; A Laucht; A S Dzurak
Journal:  Nat Commun       Date:  2019-12-03       Impact factor: 14.919

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.