Literature DB >> 31080382

Spatially Resolved Electric-Field Manipulation of Magnetism for CoFeB Mesoscopic Discs on Ferroelectrics.

You Ba1, Yan Liu1, Peisen Li1, Liang Wu2, John Unguris3, Daniel T Pierce3, Danni Yang4, Ce Feng1, Yike Zhang1, Hao Wu5, Dalai Li5, Yuansi Chang5, Jinxing Zhang4, Xiufeng Han5, Jianwang Cai5, Ce-Wen Nan2, Yonggang Zhao1.   

Abstract

Electric-field control of magnetism in ferromagnetic/ferroelectric multiferroic heterostructures is a promising way to realize fast and nonvolatile random-access memory with high density and low-power consumption. An important issue that has not been solved is the magnetic responses to different types of ferroelectric-domain switching. Here, for the first time three types of magnetic responses are reported induced by different types of ferroelectric domain switching with in situ electric fields in the CoFeB mesoscopic discs grown on PMN-PT(001), including type I and type II attributed to 109°, 71°/180° ferroelectric domain switching, respectively, and type III attributed to a combined behavior of multiferroelectric domain switching. Rotation of the magnetic easy axis by 90° induced by 109° ferroelectric domain switching is also found. In addition, the unique variations of effective magnetic anisotropy field with electric field are explained by the different ferroelectric domain switching paths. The spatially resolved study of electric-field control of magnetism on the mesoscale not only enhances the understanding of the distinct magnetic responses to different ferroelectric domain switching and sheds light on the path of ferroelectric domain switching, but is also important for the realization of low-power consumption and high-speed magnetic random-access memory utilizing these materials.

Entities:  

Year:  2018        PMID: 31080382      PMCID: PMC6508615          DOI: 10.1002/adfm.201706448

Source DB:  PubMed          Journal:  Adv Funct Mater        ISSN: 1616-301X            Impact factor:   18.808


  1 in total

1.  Full voltage manipulation of the resistance of a magnetic tunnel junction.

Authors:  Aitian Chen; Yuelei Zhao; Yan Wen; Long Pan; Peisen Li; Xi-Xiang Zhang
Journal:  Sci Adv       Date:  2019-12-13       Impact factor: 14.136

  1 in total

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