| Literature DB >> 31055914 |
Jiajun Chen1, Kai Shao1, Weihuang Yang2, Weiqing Tang1, Jiangpeng Zhou1, Qinming He1, Yaping Wu1, Chunmiao Zhang1, Xu Li1, Xu Yang1, Zhiming Wu1, Junyong Kang.
Abstract
Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical properties, which open up a new opportunity for atomically thin optoelectronic devices. Synthesizing large-scale monolayer TMDCs on the SiO2/Si substrate is crucial for practical applications, however, it remains a big challenge. In this work, a method which combines chemical vapor deposition (CVD) and thermal evaporation was employed to grow monolayer tungsten disulfide (WS2) crystals. Through controlling the density and the distribution of W precursors, a wafer-scale continuous uniform WS2 film was achieved, with the structural and spectral characterizations confirming a monolayer configuration and a high crystalline quality. Wafer-scale field-effect transistor arrays based on the monolayer WS2 were fabricated. The devices show superior electrical performances, and the maximal mobility is almost 1 order of magnitude higher than those of CVD-grown large-scale TMDC devices reported so far.Entities:
Keywords: WS monolayer; chemical vapor deposition; field-effect transistor arrays; thermal evaporation; wafer-scale
Year: 2019 PMID: 31055914 DOI: 10.1021/acsami.9b04791
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229