Literature DB >> 31045123

DAC-less PAM-4 generation in the O-band using a silicon Mach-Zehnder modulator.

L Deniel, M Gay, D Pérez Galacho, C Baudot, L Bramerie, O Ozolins, F Boeuf, L Vivien, C Peucheret, D Marris-Morini.   

Abstract

We demonstrate 20-Gb/s 4-level pulse amplitude modulation (PAM-4) signal generation using a silicon Mach-Zehnder modulator (MZM) in the O-band. The modulator is driven by two independent binary streams, and the PAM-4 signal is thus generated directly on the chip, avoiding the use of power-hungry digital-to-analog converters (DACs). With optimized amplitude levels of the binary signals applied to the two arms of the MZM, a pre-forward error correction (FEC) bit-error rate (BER) as low as 7.6 × 10-7 is obtained. In comparison with a commercially available LiNbO3 modulator, the penalty is only 2 dB at the KP4 FEC threshold of 2.2 × 10-4.

Entities:  

Year:  2019        PMID: 31045123     DOI: 10.1364/OE.27.009740

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

Review 1.  Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators.

Authors:  Changhao Han; Ming Jin; Yuansheng Tao; Bitao Shen; Xingjun Wang
Journal:  Micromachines (Basel)       Date:  2022-02-28       Impact factor: 2.891

  1 in total

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