Literature DB >> 31038906

Flexible Transparent Organic Artificial Synapse Based on the Tungsten/Egg Albumen/Indium Tin Oxide/Polyethylene Terephthalate Memristor.

Xiaobing Yan1, Xiaoyan Li1, Zhenyu Zhou1, Jianhui Zhao1, Hong Wang1, Jingjuan Wang1, Lei Zhang1, Deliang Ren1, Xin Zhang1, Jingsheng Chen2, Chao Lu3, Peng Zhou4, Qi Liu5.   

Abstract

As artificial synapses in biomimetics, memristors have received increasing attention because of their great potential in brain-inspired neuromorphic computing. The use of biocompatible and degradable materials as the active resistive layer is promising in memristor fabrication. In this work, we select egg albumen as the resistive layer to fabricate flexible tungsten/egg albumen/indium tin oxide/polyethylene terephthalate devices, which can operate normally under mechanical bending without significant performance degradation. This proposed memristor device exhibits a transparency of more than 90% under visible light with a wavelength range of 230-850 nm. Moreover, by changing amplitudes of pulse voltage instead of intervals, paired-pulse facilitation can be transmitted to paired-pulse depression, which can faithfully mimic dynamical balance of Ca2+ concentration shaped by voltage-sensitive calcium channels. The device resistance can be modulated gradually by applied pulse trains to mimic certain neural bionic behaviors, including excitatory postsynaptic current, short-term plasticity (STP) and long-term plasticity (LTP), and transitions between STP and LTP. The reasons behind these behaviors are analyzed through power consumption calculation. Excellent biosimulation characteristics have been demonstrated in this egg albumen-based memristor device, which is desirable in biocompatible and dissolvable electronics for flexible artificial neuromorphic systems.

Entities:  

Keywords:  dissolvable; egg albumen; flexible; memristor; synapse

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Year:  2019        PMID: 31038906     DOI: 10.1021/acsami.9b04443

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  3 in total

1.  Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.

Authors:  Lu Wang; Dianzhong Wen
Journal:  Micromachines (Basel)       Date:  2019-08-16       Impact factor: 2.891

2.  Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing.

Authors:  Srikrishna Sagar; Kannan Udaya Mohanan; Seongjae Cho; Leszek A Majewski; Bikas C Das
Journal:  Sci Rep       Date:  2022-03-09       Impact factor: 4.379

3.  Full-Inorganic Flexible Ag2S Memristor with Interface Resistance-Switching for Energy-Efficient Computing.

Authors:  Yuan Zhu; Jia-Sheng Liang; Xun Shi; Zhen Zhang
Journal:  ACS Appl Mater Interfaces       Date:  2022-09-14       Impact factor: 10.383

  3 in total

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