Literature DB >> 31027014

Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems.

Bokyung Kim1, Sumin Jo1, Wookyung Sun1, Hyungsoon Shin1.   

Abstract

In this study, we analyzed the memristor device typically used as a synapse in neuromorphic architecture and confirmed that the synaptic memristor device can be adopted to perform the machine learning algorithm. The nonlinear characteristics of the memristor complicates its use as the neuromorphic hardware in an artificial neural network (ANN) with a back-propagation algorithm. Using a memristor device with a nonlinear characteristic, we demonstrated that pattern classification can be implemented in ANNs using the Guide training algorithm without back-propagation. Furthermore, the memristor characteristics required to achieve accurate learning results are analyzed.

Year:  2019        PMID: 31027014     DOI: 10.1166/jnn.2019.17110

Source DB:  PubMed          Journal:  J Nanosci Nanotechnol        ISSN: 1533-4880


  1 in total

1.  Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems.

Authors:  Wookyung Sun; Sujin Choi; Bokyung Kim; Junhee Park
Journal:  Materials (Basel)       Date:  2019-10-22       Impact factor: 3.623

  1 in total

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