| Literature DB >> 31002447 |
Sheng-Ping Guo1, Xiyue Cheng2, Zong-Dong Sun1, Yang Chi1, Bin-Wen Liu2, Xiao-Ming Jiang2, Shu-Fang Li2, Huai-Guo Xue1, Shuiquan Deng2, Viola Duppel3, Jürgen Köhler2,3, Guo-Cong Guo2.
Abstract
A big challenge for nonlinear optical (NLO) materials is the application in high power lasers, which needs the simultaneous occurrence of large second harmonic generation (SHG) and high laser induced damage threshold (LIDT). Herein we report the preparation of a new Ga2 Se3 phase, which shows the SHG intensities of around 2.3 times and the LIDT of around 16.7 times those of AgGaS2 (AGS), respectively. In addition, its IR transparent window ca. 0.59-25 μm is also significantly wider than that of AGS (ca. 0.48-≈11.4 μm). The occurrence of the strong SHG responses and good phase-matching indicate that the structure of the new Ga2 Se3 phase can only be non-centrosymmetric and have a lower symmetry than the cubic γ-phase. The observed excellent SHG and phase-matching properties are consistent with our diffraction experiments and can be well explained by using the orthorhombic models obtained through our high throughput simulations.Entities:
Keywords: gallium; laser-induced damage threshold (LIDT); nonlinear optical materials; second harmonic generation (SHG); selenides
Year: 2019 PMID: 31002447 DOI: 10.1002/anie.201902839
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336